EMI Group North America, Inc. v. Cypress Semiconductor Corp.

104 F. Supp. 2d 370, 2000 U.S. Dist. LEXIS 9542, 2000 WL 913205
CourtDistrict Court, D. Delaware
DecidedJuly 7, 2000
DocketCIV. A. 98-350-RRM
StatusPublished
Cited by2 cases

This text of 104 F. Supp. 2d 370 (EMI Group North America, Inc. v. Cypress Semiconductor Corp.) is published on Counsel Stack Legal Research, covering District Court, D. Delaware primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

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EMI Group North America, Inc. v. Cypress Semiconductor Corp., 104 F. Supp. 2d 370, 2000 U.S. Dist. LEXIS 9542, 2000 WL 913205 (D. Del. 2000).

Opinion

OPINION

McKELVIE, District Judge.

This is a patent case. Plaintiff EMI Group North America, Inc. (“EMI”) is a Delaware corporation with its principal place of business in Wilmington, Delaware. EMI is the owner of U.S. Patent Nos. 4,826,785 (the ’785 patent) and 4,935,801 (the ’801 patent). Defendant Cypress Semiconductor Corporation is a Delaware corporation with its principal place of business in San Jose, California.

On June 18,1998, EMI filed a complaint, which it subsequently amended on July 15, 1998, alleging that Cypress infringes one or more claims of the ’785 patent and the ’801 patent. EMI seeks injunctive relief, and an award of actual damages, increased damages, costs, and fees.

On July 29, 1998, Cypress filed its answer denying infringement and asserting affirmative defenses of invalidity and unen-forceability of EMI’s patents. Cypress seeks a declaratory judgment that the patents in suit are invalid, and an award of costs and fees.

On September 14, 1999, the court held a trial in accordance with Markman v. Westview Instruments, Inc., 517 U.S. 370, 116 S.Ct. 1384, 134 L.Ed.2d 577 (1996), to construe disputed claims of the ’785 and ’801 patents. On September 30,1999, the court issued an opinion construing the disputed claims.

On October 18, 1999, the parties began a two-week jury trial. On October 29, 1999, the jury rendered its verdict that the asserted claims are not infringed by Cypress’s accused products, that the claims are invalid for anticipation and obviousness, and that the claims are invalid for lack of utility and lack of enablement because they describe a physically impossible device.

On November 4, 1999, the court entered judgment pursuant to Fed.R.Civ.P. 58 in favor of the defendant and against the plaintiff on the plaintiffs claims.

On November 18, 1999, EMI moved for judgment as a matter of law and for a new trial. The issues raised by EMI include whether substantial evidence supports the jury’s verdict that the asserted claims disclose a physically impossible device; whether the jury’s verdict that the claimed invention is an impossible device is inconsistent with its verdict that the claims are anticipated and rendered obvious by the prior art; and whether the verdict form for anticipation and obviousness improperly instructed the jury to disregard portions of the claim language referring to inherent properties of the claimed invention.

This is the court’s decision on EMI’s motions for judgment as a matter of law and for a new trial.

I. FACTUAL AND PROCEDURAL BACKGROUND

The court draws the following facts from the evidence presented to the jury during the trial.

*373 A. The Patented Technology

The patents at issue relate to fuses for disconnecting dysfunctional circuitry in semiconductor chips. Semiconductor chips commonly contain redundant circuitry, such that if any part of the circuitry is defective, it can be disconnected, allowing the redundant circuitry to take its place. The defective circuitry is disconnected by severing the portion of the “interconnect” that links it with the remainder of the circuitry. The portion of the interconnect designed to be severed to effect this substitution of circuitry is called a “fuse.” One method of severing a fuse is to irradiate it with a laser beam.

As early as 1979, semiconductor manufacturers recognized that fuses could be made from aluminum. Because aluminum reflects laser light, manufacturers found that high energy lasers were necessary to sever aluminum fuses. Due to the risk of damaging adjacent circuitry with high energy lasers, semiconductor manufacturers predominantly made fuses with polysilicon, which can be ruptured with relatively low energy lasers. In the late 1980s, semiconductor manufacturers determined that the use of aluminum fuses would permit more efficient circuit design, simplified processing, and improved reliability. The challenge faced by the inventors of the patents at issue was to develop an aluminum fuse that could be severed with a relatively low energy laser.

Paul McClure and Robert Jones are engineers who were employed in the 1980s by INMOS Corporation, a semiconductor manufacturer. Prior to 1987, McClure and Jones determined that an aluminum interconnect could be covered with a layer of a transition metal, such as titanium or tungsten, that is absorptive of laser light. According to McClure and Jones, the transition metal layer is capable of absorbing the energy of relatively low power lasers and transmitting the energy to the aluminum interconnect, which heats up and ruptures.

On January 27, 1987, McClure and Jones submitted a patent application to the U.S. Patent and Trademark Office (“PTO”), claiming a novel method for severing aluminum semiconductor fuses. The following figures illustrate the claimed invention. Figure 4a shows an aluminum interconnect (24) covered with an absorptive transition metal layer (22). The fuse is surrounded by a glass “passivation” layer (26). To sever the fuse, it is irradiated with a laser beam (30). The laser beam causes the fuse to rupture, removing the interconnect, as shown in Figure 5a.

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The original claim language submitted by McClure and Jones recites a method of forming the various structural layers of the fuse. The application claimed the use of an “optically absorptive material” on top of the interconnect, without specifying which material to use. Throughout the prosecution history, as described more fully in this court’s claim construction opinion, see EMI Group North America, Inc. v. Cypress Semiconductor Corp., 68 F.Supp.2d 421 (D.Del.1999), the inventors progressively narrowed the scope of their *374 invention. In particular, they specified that the absorptive layer should be comprised of “an optically absorptive transition metal.” Moreover, the inventors incorporated into the claims a recitation of how the fuse ruptures when exposed to a laser beam. In what would become claim 1 of the ’785 patent, the inventors stated that the absorptive layer “form[s] a cap to prevent evaporation of said fuse portion when said fuse portion is exposed to a directed energy source to increase the vapor pressure under the cap to produce an explosive removal of said fuse portion.” All asserted claims recite that a build-up of vapor pressure under the absorptive layer “cap” induces an explosive removal of the fuse.

On May 2,1989, the PTO issued the ’785 patent, entitled “Metallic Fuse with Optically Absorptive Layer,” to McClure and Jones, who assigned the patent to INMOS. On June 19, 1990, the PTO issued the ’801 patent to the same inventors and assignee. The ’801 patent is a divisional patent of the ’785 patent. The ’785 patent claims a method for fabricating the fuses, and the ’801 patent claims the fuses themselves. INMOS was subsequently acquired by EMI’s parent company, which transferred the patent rights to EMI.

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104 F. Supp. 2d 370, 2000 U.S. Dist. LEXIS 9542, 2000 WL 913205, Counsel Stack Legal Research, https://law.counselstack.com/opinion/emi-group-north-america-inc-v-cypress-semiconductor-corp-ded-2000.