Emi Group North America, Inc. v. Cypress Semiconductor Corporation

268 F.3d 1342, 60 U.S.P.Q. 2d (BNA) 1423, 2001 U.S. App. LEXIS 20717, 2001 WL 1111501
CourtCourt of Appeals for the Federal Circuit
DecidedSeptember 21, 2001
Docket00-1508
StatusPublished
Cited by48 cases

This text of 268 F.3d 1342 (Emi Group North America, Inc. v. Cypress Semiconductor Corporation) is published on Counsel Stack Legal Research, covering Court of Appeals for the Federal Circuit primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
Emi Group North America, Inc. v. Cypress Semiconductor Corporation, 268 F.3d 1342, 60 U.S.P.Q. 2d (BNA) 1423, 2001 U.S. App. LEXIS 20717, 2001 WL 1111501 (Fed. Cir. 2001).

Opinion

RADER, Circuit Judge.

After a jury verdict, the United States District Court for the District of Delaware denied EMI Group North America, Inc.’s motion for a new trial. EMI Group N. Am., Inc. v. Cypress Semiconductor Corp., 104 F.Supp.2d 370 (D.Del.2000). Because the district court did not abuse its discretion in determining that the jury verdicts were consistent, this court affirms.

EMI also sought a judgment as a matter of law (JMOL) that United States Patent Nos. 4,826,785 (the '785 patent) and 4,935,-801 (the '801 patent) are not invalid. The district court denied the motion in part. Because a reasonable jury could conclude on this record that claim 1 of the '785 patent and claims 1 and 5 of the '801 patent are impossible, this court affirms the district court’s denial of EMI’s motion for JMOL.

The district court granted in-part EMI’s motion for JMOL that the '785 and '801 patents are not invalid for obviousness or anticipation. Because the district court erred in finding that the mechanism recited in the asserted claims is not inherent, this court reverses the district court’s partial grant of EMI’s motion for JMOL.

The district court also „ denied in-part EMI’s motion for JMOL that Cypress Semiconductor Corp. infringed the asserted claims of the '785 and '801 patents. Because we find that the claims of the '785 and '801 patents are invalid, this court does not reach the issue of infringement.

I.

The present case features metallic fuses for semiconductor chips. Due to manufacturing complexities, semiconductor chips typically have redundant circuitry. Manufacturers test each chip to determine whether portions of the chip are dysfunctional. Manufacturers then disconnect the dysfunctional portions and the redundant circuitry takes over the function. With this method, the manufacturing process yields a greater percentage of viable chips.

Interconnects, called links or fuses, typically connect sections of a chip. To disconnect a dysfunctional portion of the semiconductor chip, manufacturers sever the fuses that connect the dysfunctional portion to the rest of the chip. A laser beam performs this disconnecting function by melting or “blowing” a portion of the fuse. EMI owns the '801 patent, which claims a structure for a metallic fuse with an optically absorptive upper layer, and the '785 patent, which claims a method for fabricating and blowing such a fuse. The '801 patent is a divisional of the application that led to the '785 patent.

Originally, the semiconductor industry made fuses of polysilicon. A laser easily blew these fuses without damaging the surrounding structures of the chip. . Because metal produced a more efficient and reliable circuit, manufacturers began switching to metal fuses in the 1980s. Metal fuses, however, presented a significant manufacturing problem because they do not melt without a high energy laser blast. This high laser energy damages the underlying silicon substrate and surrounding polysilicon structures of the chip.

In 1986, Dr. Robert Jones, Jr. and Mr. Paul McClure, both scientists with INMOS Corp., 1 developed a metallic fuse structure that would melt under a low energy laser. *1345 The fuse structure 24, as disclosed in both the '785 and '801 patents, has metal interconnect layers, typically made of a material such as aluminum, underneath a cap 22. The cap is an optically absorptive refractory material, such as tungsten or titanium. This optically absorptive refractory material has a higher boiling point than underlying metal layers and absorbs low energy laser radiation that the underlying metal layers would typically reflect. In some of the embodiments disclosed in both patents, the cap 22 is further covered with a glass passivation layer 26.

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The specification of both patents describes the theoretical mechanism for blowing the disclosed metallic fuse. According to the specifications, as the transition metal layer absorbs laser energy, it causes “the rest of the underlying metallic fuse portion to heat up and eventually melt” while it remains solid. '785 patent, Col. 2,11. 44-45; '801 patent, Col. 2,11. 50-51. The underlying metallic portion eventually evaporates and the fuse quickly accumulates vapor pressure under the transition metal layer. This vapor pressure, in theory, causes the melted fuse material to explode, thus removing the fuse from the chip. '785 patent, Col. 2, 11. 45-50; '801 patent, Col. 2, 11. 51-56. This entire fuse explosion sequence occurs within nanoseconds.

Thus, according to both the '785 and '801 patents: “The use of the thin, high-temperature optically absorptive coating on top of the interconnect member forming the fuse portion acts as a cap to prevent evaporation until the vapor pressure of the material below the cap is very high.” '785 patent, Col. 2, 11. 50-54; '801 patent, Col. 2, 11. 56-60. Dr. Jones and Mr. McClure did not, however, practice or observe the actual severance of the fuse by this method. Rather the disclosed and claimed explosive mechanism is theoretical. Claim 1, the only independent claim of the '785 patent, recites:

1. A method of fabricating on a substrate surface a fuse forming an integral part of a metallic interconnect line joining elements in an integrated circuit, the method comprising:
forming a metal interconnect layer above the substrate surface;
forming a layer of an optically absorptive refractory transition metal above said metal interconnect layer, said refractory metal having a higher boiling point than said metal interconnect layer;
defining said metal interconnect layer and said optically absorptive layer into a patterned metallic interconnect for the integrated circuit including a fuse portion therein, said refractory metal forming a cap to prevent evaporation of said fuse portion when said fuse portion is exposed to a directed energy source to *1346 increase the vapor pressure under the cap to produce an explosive removal of said fuse portion; and
removing said fuse portion from said interconnect line by exposing said optically absorptive refractory metal to directed energy source that explosively removes said fuse portion without damaging the substrate.

(Emphasis added.) Claims 1 and 5, the only independent claims of the '801 patent, recite:

1, A fuse for a metallic interconnect line that joins elements of an integrated circuit formed on and in a silicon substrate wherein the fuse comprises
a layered interconnect structure having an upper layer of an optically absorptive material and a lower layer of metal below said upper layer,
said optically absorptive material having a higher boiling temperature than that of said metal, said upper layer forming an explosion-inducing cap,

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268 F.3d 1342, 60 U.S.P.Q. 2d (BNA) 1423, 2001 U.S. App. LEXIS 20717, 2001 WL 1111501, Counsel Stack Legal Research, https://law.counselstack.com/opinion/emi-group-north-america-inc-v-cypress-semiconductor-corporation-cafc-2001.