EMI Group North America, Inc. v. Cypress Semiconductor Corp.

68 F. Supp. 2d 421, 1999 WL 787400
CourtDistrict Court, D. Delaware
DecidedSeptember 30, 1999
DocketCiv.A. 98-350RRM
StatusPublished
Cited by5 cases

This text of 68 F. Supp. 2d 421 (EMI Group North America, Inc. v. Cypress Semiconductor Corp.) is published on Counsel Stack Legal Research, covering District Court, D. Delaware primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
EMI Group North America, Inc. v. Cypress Semiconductor Corp., 68 F. Supp. 2d 421, 1999 WL 787400 (D. Del. 1999).

Opinion

*424 OPINION

McKELVIE, District Judge.

This is a patent case. Plaintiff EMI Group North America, Inc. is a Delaware corporation with its principal place of business in Wilmington, Delaware. EMI is the owner of U.S.Patent Nos. 4,355,377 (the ’377 patent); 4,826,785 (the ’785 patent); 4,935,801 (the ’801 patent); and Reissue Patent 35,154 (the ’154 reissue patent). Defendant Cypress Semiconductor Corporation is a Delaware corporation with its principal place of business in San Jose, California.

On June 18, 1998, EMI filed a complaint alleging that Cypress infringes one or more claims of the ’377 patent and the ’154 reissue patent. EMI filed an amended complaint on July 15, 1998, asserting claims of infringement of the ’785 patent and the ’801 patent. On July 29, 1998, Cypress filed its answer denying infringement and asserting affirmative defenses of invalidity and/or unenforceability of EMI’s patents. On February 22, 1999, the parties stipulated to the dismissal of EMI’s claims against Cypress for infringement of the ’377 patent and the ’154 reissue patent, leaving at issue claims of infringement of the ’785 and the ’801 patents. The case is scheduled for a two-week jury trial beginning October 18,1999.

On September 13-14, 1999, the court held a trial in accordance with Markman v. Westview Instruments, Inc., 517 U.S. 370, 116 S.Ct. 1384, 134 L.Ed.2d 577 (1996), to construe disputed claims of the ’785 and ’801 patents. This is the court’s construction of those disputed claims.

I. FACTUAL AND PROCEDURAL BACKGROUND

The court draws the following facts from the complaint, the patents at issue, the prosecution history of those patents, and a chemical dictionary.

A. The ’785 and ’801 Patents

On May 2, 1989, the U.S.Patent and Trademark Office (PTO) issued the ’785 patent. The patent is entitled “Metallic Fuse with Optically Absorptive Layer.” The inventors are Paul J. McClure and Robert E. Jones, Jr, and the assignee is INMOS Corporation. On June 19, 1990, the PTO issued the ’801 patent, naming the same inventors and assignee. On May 23, 1988, INMOS Corporation changed its name to Thorn EMI North America, Inc., which on August 21, 1996 changed its name to EMI Group North America, Inc., the plaintiff in this action.

The ’785 and ’801 patents describe the same technology. The ’785 patent claims a method for practicing the invention, and the ’801 patent claims an apparatus. The patents relate to fuses for disconnecting dysfunctional circuitry in semiconductor chips. Semiconductor chips commonly contain redundant circuitry, such that if any part of the circuitry is defective, it can be disconnected and the redundant circuitry can take its place. The defective circuitry is disconnected by severing the portion of the metal interconnect that links it with the remainder of the circuitry. The portion of the metal interconnect designed to be severed to effect this substitution of circuitry is called a “fuse.” One way to sever a fuse is to focus a laser beam on the fuse, irradiating it with the laser’s energy until the fuse is severed.

The method and apparatus claims at issue relate to a layered fuse designed to improve the ability of laser beams to sever the fuse material. In the preferred embodiment, as described in the patents at issue, the fuse is formed upon an insulating dielectric layer, which resides upon a substrate. A conductive metal interconnect layer, which connects the redundant circuitry to the remainder of the chip, is formed above the dielectric layer. The metal interconnect is made of aluminum or an aluminum alloy. These metals reflect laser light, and so a high power laser pulse is needed to sever a bare aluminum inter *425 connect. Because strong laser pulses may damage the remainder of the chip, it is desirable to modify the fuse to better absorb the laser light. To this end, the patents in question teach the use of a layer of an optically absorptive transition metal, such as titanium, tungsten, tantalum, or molybdenum, on top of the interconnect. An insulating glass passivation layer encases the structure. The transition metal, when exposed to a lower power laser, absorbs the energy and transmits it to the interconnect. By a process whose details form the crux of this dispute, the aluminum layer heats up and causes the fuse to rupture, severing the connection between the redundant circuitry and the remainder of the chip.

B. The Prosecution History

The court interprets ambiguous claims of the patents in light of the specification and the prosecution history. See Markman v. Westview Instruments, Inc., 52 F.3d 967, 979 (Fed.Cir.1995) (in banc). In particular, analysis of the prosecution history is relevant to resolve the following ambiguities: (1) whether claims 1 and 9 of the ’785 patent, which recite the use of an optically absorptive metal, refer to the use of an alloy; (2) whether claim 1 of the ’785 patent, which recites the use of a “cap to prevent evaporation” requires that the cap prevent all significant evaporation from the fuse portion; (3) whether claim 1 of the ’785 patent, which recites an “explosive removal” of the fuse, permits forces other than vapor buildup to contribute to the explosion; (4) whether the term “exposed,” as referred to in claim 17 of the ’785 patent, means that the absorptive layer is exposed to laser light or is exposed by etching away the overlying passivation layer; (5) whether the term “causes said lower layer to vaporize,” as recited in claim 1 of the ’801 patent, requires that the lower layer totally vaporize; and (6) whether the term “disconnecting the previously joined elements,” as recited in claim 1 of the ’801 patent, requires.that the explosion totally disconnect the circuit.

1. Prosecution History of the ’785 Patent

a. Claim 1

i. The application

On January 27, 1987, inventors Paul J. McClure and Robert E. Jones, Jr. applied for a patent for a metallic fuse with an optically absorptive layer. In the summary of the invention, the inventors described the materials that can be used for the interconnect and for the optically absorptive layers. The inventors specified the use of a metal for the interconnect, and recommended the use of aluminum or an aluminum alloy as a preferred embodiment. The application states that “transition metals” are the preferred material for the absorptive layer, particularly the refractory transition metals. The detailed description of the preferred embodiment states that “[o]f the refractory metals, titanium, tantalum, molybdenum and tungsten are the preferred materials for [the] absorptive layer.... In the preferred imbod-iment, [the] absorptive ... layer is titanium.”

The original claim language disclosing the interconnect was not altered during prosecution. The claim language for the absorptive layer, however, is broader in the initial application than in the final claim. It did not specify a material for the absorptive layer.

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68 F. Supp. 2d 421, 1999 WL 787400, Counsel Stack Legal Research, https://law.counselstack.com/opinion/emi-group-north-america-inc-v-cypress-semiconductor-corp-ded-1999.