Semiconductor Energy Laboratory Co., Ltd. v. Samsung Electronics Co., Ltd.

204 F.3d 1368, 54 U.S.P.Q. 2d (BNA) 1001, 2000 U.S. App. LEXIS 3164
CourtCourt of Appeals for the Federal Circuit
DecidedMarch 2, 2000
Docket99-1103
StatusPublished
Cited by24 cases

This text of 204 F.3d 1368 (Semiconductor Energy Laboratory Co., Ltd. v. Samsung Electronics Co., Ltd.) is published on Counsel Stack Legal Research, covering Court of Appeals for the Federal Circuit primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
Semiconductor Energy Laboratory Co., Ltd. v. Samsung Electronics Co., Ltd., 204 F.3d 1368, 54 U.S.P.Q. 2d (BNA) 1001, 2000 U.S. App. LEXIS 3164 (Fed. Cir. 2000).

Opinion

204 F.3d 1368 (Fed. Cir. 2000)

SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Plaintiff-Appellant,
v.
SAMSUNG ELECTRONICS CO., LTD., SAMSUNG ELECTRONICS AMERICA, INC.,
and SAMSUNG SEMICONDUCTOR, INC., Defendants-Cross Appellants.

98-1377, 99-1103

United States Court of Appeals for the Federal Circuit

DECIDED: March 2, 2000

Appealed from: United States District Court for the Eastern District of Virginia[Copyrighted Material Omitted]

Judge Thomas Selby Ellis III

J. Alan Galbraith, Williams & Connolly, of Washington, DC; and Joel Davidow, Ablondi, Foster, Sobin & Davidow, P.C., of Washington, DC, argued for plaintiff-appellant. With them on the brief was David S. Blatt, Williams & Connolly. Of counsel was Michael T. Brady, Ablondi, Foster, Sobin & Davidow, P.C.

David J. Healey, Tobor, Goldstein & Healey L.L.P., of Houston, Texas, argued for defendants-cross appellants. With him on the brief was Gary J. Fischman. Of counsel on the brief were Richard L. Stanley, Arnold White & Durkee, of Houston, Texas; and Cecilia H. Gonzalez, Howrey & Simon, of Washington, DC. Of counsel was Basil Carl Culyba, Howrey & Simon.

Before MICHEL, Circuit Judge, SKELTON, Senior Circuit Judge, and SCHALL, Circuit Judge.

MICHEL, Circuit Judge.

On October 10, 1996, Semiconductor Energy Laboratory Co., Ltd. ("SEL") sued Samsung Electronics Co., Ltd., Samsung Electronics America, Inc., and Samsung Semiconductor, Inc. (collectively "Samsung") in the United States District Court for the Eastern District of Virginia, alleging that Samsung's production and sales of active matrix displays infringed SEL's U.S. Patent No. 5,543,636 ("the '636 patent") directed to semiconductor technology. The district court first granted SEL's motion for summary judgment dismissing Samsung's federal and New Jersey Racketeer Influenced and Corrupt Organizations ("RICO") counterclaims. See SEL v. Samsung, 4 F. Supp. 2d 473 (E.D. Va. 1998) ("SEL 1"). After a seven-day bench trial, the district court also held the '636 patent to be unenforceable for SEL's inequitable conduct before the Patent and Trademark Office ("PTO"). See SEL v. Samsung, 4 F. Supp. 2d 477 (E.D. Va. 1998) ("SEL 2"); SEL v. Samsung, 24 F. Supp. 2d 537 (E.D. Va. 1998) ("SEL 3"). Both parties appeal. Because we are not persuaded that the district court either abused its discretion in holding the '636 patent unenforceable for inequitable conduct or improperly dismissed Samsung's federal and New Jersey RICO counterclaims, we affirm.

BACKGROUND

SEL is a Japanese company specializing in the research and development of semiconductor technology. SEL engages in no manufacturing and supports its research efforts from revenues from patent licensing. Since 1980, SEL has filed over 5,000 patent applications worldwide and has been awarded approximately 1,500 U.S. and foreign patents. Dr. Shunpei Yamazaki, a solid state physicist and the president and majority shareholder of SEL, is the named inventor or co-inventor on most of SEL's patents, including the '636 patent.

Entitled "Insulated Gate Field Effect Transistor" ("IGFET"), the '636 patent claims a non-single crystal silicon thin film transistor ("TFT"), a type of IGFET. Such TFTs can be used to switch the pixels in an active matrix display unit on or off. The TFT includes a source, a drain, a silicon nitride gate insulator, an insulated substrate, and an intrinsic amorphous silicon channel region. The channel region is "sandwiched" between the gate insulator and the insulated substrate. By limiting the level of oxygen, carbon, or nitrogen in the channel region to an amount not exceeding 5 x 1018 atoms/cm3, the claimed invention greatly improves the TFT's electrical properties and consequently overcomes potential deficiencies, such as hysteresis (blurring).

The application for the '636 patent was filed on June 7, 1995, and the '636 patent itself issued on August 6, 1996; SEL alleges a much earlier priority date of May 18, 1984, however. Gerard Ferguson, SEL's patent attorney, prosecuted the application for the '636 patent and its ancestor applications, except for a brief period when Dr. Yamazaki revoked his power of attorney because Mr. Ferguson sought to submit certain material prior art references to the PTO.

The '636 patent began as a former 37 C.F.R. § 1.60 (1995) ("Rule 60") divisional application, and thus had its own Information Disclosure Statement ("IDS").1 The IDS, filed on November 15, 1995, was fifteen pages long. The IDS was accompanied by a Form PTO-1449 listing ninety references that it wished to make of record, each of which the examiner initialed. These references included Japanese Laid-Open Application No. 56-135968, assigned to Canon K.K. ("the Canon reference"). In the IDS, SEL submitted the entire 29-page Canon reference in its original Japanese, a concise explanation of its relevance, and an existing one-page partial English translation from a prior unrelated patent application. The concise explanation succinctly described the Canon reference as disclosing "the use of silicon nitride for a gate insulating layer of a thin film transistor." The one-page partial translation covered four short sections of the Canon reference describing a TFT structure, a semiconductor layer consisting of amorphous silicon, a gate electrode coated with silicon nitride, and an empirical observation of the effect of substituting silicon oxide for silicon nitride. SEL also made of record three references that a potential licensee, IBM, had brought to its attention as important prior art for obviousness purposes: a 1983 article by C.C. Tsai, entitled "Amorphous Si Prepared in a UHV Plasma Deposition System" ("the Tsai article"), and two of Dr. Yamazaki's solar cell patents, Japanese Patent Laid-Open Application Nos. 59-35423 ("the '423 application") and 59-35488 ("the '488 application"). The Tsai article and the '423 and '488 applications all teach the reduction of impurities below the level claimed in the '636 patent.

On October 10, 1996, SEL filed a complaint in the United States District Court for the Eastern District of Virginia alleging that Samsung's active matrix displays and computers having such displays infringed three of SEL's semiconductor patents: the '636 patent, U.S. Patent No. 5,521,400 ("the '400 patent"), and U.S. Patent No. 5,349,204 ("the '204 patent").2 Samsung denied infringement and asserted numerous affirmative defenses, including non-enablement, obviousness, best mode violation, and inequitable conduct. Samsung subsequently counterclaimed, charging SEL with federal and New Jersey RICO, antitrust, and unfair competition violations.

SEL moved for summary judgment on Samsung's inequitable conduct defense and on Samsung's RICO, antitrust, and unfair competition counterclaims. The district court granted SEL's motion on the RICO and antitrust counterclaims, but denied it on the inequitable conduct defense and the unfair competition counterclaim.

After a seven-day bench trial, the district court found the '636 patent to be unenforceable for inequitable conduct under two alternative theories.

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Bluebook (online)
204 F.3d 1368, 54 U.S.P.Q. 2d (BNA) 1001, 2000 U.S. App. LEXIS 3164, Counsel Stack Legal Research, https://law.counselstack.com/opinion/semiconductor-energy-laboratory-co-ltd-v-samsung-electronics-co-ltd-cafc-2000.