Nikon Corp. v. ASM Lithography B.V.

308 F. Supp. 2d 1039, 2004 U.S. Dist. LEXIS 3780, 2004 WL 486233
CourtDistrict Court, N.D. California
DecidedMarch 11, 2004
DocketC 01-5031 MHP, C 02-5081 MHP, C 02-5601 MHP
StatusPublished
Cited by2 cases

This text of 308 F. Supp. 2d 1039 (Nikon Corp. v. ASM Lithography B.V.) is published on Counsel Stack Legal Research, covering District Court, N.D. California primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
Nikon Corp. v. ASM Lithography B.V., 308 F. Supp. 2d 1039, 2004 U.S. Dist. LEXIS 3780, 2004 WL 486233 (N.D. Cal. 2004).

Opinion

Claim Construction Memorandum and Order for United States Patent Numbers 6,233,041, 6,377,336, 6,392,740, 6,008,500, and 5,810,832

PATEL, Chief Judge.

On December 21, 2001, plaintiffs Nikon Corporation and Nikon Precision, Inc. (col *1053 lectively “Nikon” or “plaintiffs”) brought a patent infringement action against defendants ASM Lithography B.V. and ASM Lithography, Inc. (collectively “ASML” or “defendants”). 1 Among other things, plaintiffs’ complaint alleges infringement of four patents: United States Patent Number 6,233,041 (“the ’041 patent”), United States Patent Number 6,377,336 (“the ’336 patent”), United States Patent Number 6,392,740 (“the ’740 patent”), and United States Patent Number 6,008,500 (“the ’500 patent”). All four patents pertain to photolithographic and microlitho-graphic machines used in the manufacture of integrated circuits.

Defendants timely answered plaintiffs’ complaint, later asserting inequitable conduct and antitrust counterclaims. Some of these counterclaims grew from plaintiffs’ alleged infringement of United States Patent Number 5,801,832 (“the ’832 patent”), an ASML-held patent also pertaining to photolithographic machinery. Nikon then filed a motion to dismiss defendants’ counterclaims. On July 19, 2002, the court denied without prejudice plaintiffs’ motion to dismiss. Now before the court are the parties’ memoranda regarding claim construction of the disputed patent terms. The court has considered fully the parties’ arguments and submissions, and for the reasons set forth below, the court enters the following memorandum and order.

BACKGROUND

Both plaintiffs 2 and defendants 3 develop and produce systems and components used in photo- and micro-lithography. Used to manufacture semiconductor integrated circuits, lithographic machines create extremely small and precise patterns of electronic circuitry on integrated circuit chips. A subset of photolithographic technology, microlithographic machines 4 transfer minute 5 pattern features to a substrate — e.g., a silicon wafer — and are the only machines capable of creating the kind of integrated circuit chips needed in the construction of electronic equipment. 6 Nikon, ASML, and Canon are the only manufacturers of microlithographic machines.

To construct a working integrated circuit chip, a microlithographic machine prints a circuitry pattern on each layer of a circuit chip. This printing process often utilizes projection lithography, a type of lithographic patterning that relies on a light source and a pair of optical systems to transfer circuitry patterns. At the start of a projection lithography process, a light-sensitive covering (a “photoresist”) is applied to a “wafer” (or “substrate”), a grouping of thin layers of circuitry situated on a base of silicon. 7 Also at the start of *1054 the process, a transparent piece of glass or quartz (a “mask” or “reticle”) is coated partially with chrome such that a pattern of opaque and transparent features emerges. Both the mask and the wafer are then placed in a projection exposure apparatus, the wafer deposited on a “wafer stage,” the mask on a “mask stage.” Using an optical illumination system, light is then cast onto the mask. Light shines through the transparent portions of the mask into a projection optical system. This projection optical system' — which is made up, in pertinent part, of a precision lens — focuses the pattern of light features onto the wafer, leaving an image of the pattern in the photoresist layer. The process is repeated for each chip — and each layer of a chip— on the wafer.

Photolithography machines are complex and expensive devices, but they do not embody entirely new technology. Pioneered in the 1950s and 1960s, photolithog-raphy devices are the subject of numerous inventions and a comparable number of patents. Some of these inventions and patents address the “periodic structure” of mask patterns — i.e., the size and series of the transparent and opaque spaces along a mask. When light is projected onto a mask, some light passes through the surface of a mask without diffraction, creating “zero-order diffracted” light; as light is shined onto a mask, other light (viz., “nonzero-order diffracted” light) changes path after contact with the edges of the opaque portions of the mask. As the periodic structure of a pattern grows increasingly fine, two things occur: first, non-zero-order diffracted light exits the mask at increasingly large angles; second, more light traveling along the optical axis will strike the mask perpendicularly, diffracting at such large angles that it cannot be captured by the projection optical system.

“Off-axis” illumination attempts to address this loss of light. In off-axis illumination, light strikes the mask at a non-perpendicular angle, i.e., from a direction set-off from the optical axis itself. In this way, zero-order diffracted light is inclined to a degree between the zero-order and first-order diffraction, permitting more of both types of light to enter the projection optical system than would be possible through “on-axis” illumination. Per wavelength of illuminating light, then, off-axis illumination produces greater diffraction and allows the use of finer mask patterns.

Even with off-axis illumination, a photol-ithographic machine requires thousands of components and parts to function properly. The machines require, inter alia, an adequate light source, an illumination optic assembly (including, e.g., lenses, mirrors, and the like), a projection optic system to focus the light pattern, and a system or technique to limit the vibrations that occur as a consequence of wafer and mask movement. The five patents at issue in this action address putative advances on a number of these machine components; four of these patents are held by Nikon, and one is held by ASML.

I. The Nikon Patents

A. The ’OH Patent

Titled “Exposure Method Utilizing Diffracted Light Having Different Orders of Diffraction,” the ’041 patent was issued on May 15, 2001. See ’041 Patent at 1. Put generally, the ’041 patent addresses a particularized method of transferring a fine pattern from a mask to a substrate through photolithographic projection exposure. Nikon describes the ’041 patent as a marked and distinct advance in preceding off-axis technology, technology that used “annular illumination” (that is, illumination in the shape of a complete ring) centered on the optical axis. The ’041 patent, Nikon details, uses symmetrical, off-axis pairs of higher-illumination intensity areas *1055 in lieu of full ring illumination, adjusting the pair-spacing to suit particular mask patterns. See id. at 14:48-16:36.

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Bluebook (online)
308 F. Supp. 2d 1039, 2004 U.S. Dist. LEXIS 3780, 2004 WL 486233, Counsel Stack Legal Research, https://law.counselstack.com/opinion/nikon-corp-v-asm-lithography-bv-cand-2004.