Netlist, Inc. v. Samsung Electronics Co, LTD

District Court, E.D. Texas·Decided November 21, 2023·No. 2:22-cv-00293·Unknown

Opinion

IN THE UNITED STATES DISTRICT COURT FOR THE EASTERN DISTRICT OF TEXAS MARSHALL DIVISION

NETLIST, INC., § § Plaintiff, § § v. § CIVIL ACTION NO. 2:22-CV-00293-JRG § (Lead Case) SAMSUNG ELECTRONICS CO, LTD, et § al. § § Defendants. §

NETLIST, INC., § § Plaintiff, § § v. § CIVIL ACTION NO. 2:22-CV-00294-JRG § MICRON TECHNOLOGY, INC., et al. § § Defendants. § § CLAIM CONSTRUCTION MEMORANDUM OPINION AND ORDER In these consolidated patent cases, Netlist alleges infringement by Samsung and Micron (and their affiliates) (together, “Defendants”) of claims from four patents related to computer memory—U.S. Patent Nos. 7,619,912 (the “’912 Patent”); 9,858,215 (the “’215 Patent”); 10,268,608 (the “’608 Patent”); and 11,093,417 (the “’417 Patent”). The parties present ten dis- putes1 about the proper construction of claim terms from the patents. Having considered the

1 The parties briefed disputes for eleven claim terms, but Netlist has since withdrawn its assertion of a number of claims from the ’912 Patent. See Joint Notice of Mootness Regarding Construction of Claims No Longer Asserted, Dkt. No. 201. As result, there is no longer a live dispute concerning one of the terms. See id. at 2–3. parties’ briefing and arguments of counsel during a September 26, 2023 hearing, the Court resolves the disputes as follows. I. BACKGROUND A. U.S. Patent 7,619,912 The ’912 Patent relates “specifically to devices and methods for improving the perfor-

mance, the memory capacity, or both, of memory modules.” ’912 Patent at 1:22–24. Generally, doubling the memory size of a DRAM2 device more than doubles the associated cost. For example, by fabricating a 1-GB memory module using thirty-six 256-Mb memory devices [instead of 18 512-Mb devices], the cost of the resulting 1-GB memory module can be reduced since the unit cost of each 256-Mb memory device is typically lower than one-half the unit cost of each 512-Mb memory device. The cost savings can be significant, even though twice as many 256-Mb memory devices are used in place of the 512-Mb memory devices. Id. at 4:51–58. “In other words, the price per bit ratio of the higher-density DRAM devices is greater than that of the lower-density DRAM devices.” Id. at 4:62–64. Thus, under certain market conditions, there is an economic incentive for using pairs of lower-density DRAM devices instead of individual higher-density devices. Id. at 4:64–5:5. The problem, however, is that a computer system may not be configured to provide the required control signals, like chip-select signals, for the lower-density chips. For example, a system expecting four ranks of memory might only provide two chip-select signals, but more are needed if replacing higher-density devices with lower-density devices. See id. at 7:20–35. To address the problem, the patent teaches using a logic element, such as a programmable

2 DRAM stands for “dynamic random-access memory.” Stone Decl., Dkt. No. 129-6 ¶ 23. That the memory is “dynamic” means “the memory only remembers its information while power is main- tained; if power is turned off, the contents of the DRAMs are lost.” Id. logic device (PLD), to “translate” the computer system’s signals to signals appropriate for the lower-density memory devices. As an example, Table 1 shows a logic table for translating two chip-select signals and a row/column address signal from the computer (CS0, CS1, An+1) to four chip-select signals connected to the memory devices (CA0A, CA0B, CA1A, CA1B). Id. at 7:60–67. The claims recite this “translation” functionality as responding to command and input sig-

nals from the computer by generating command and output signals to the memory devices. For example, Claim 1 recites: a circuit mounted to the printed circuit board, the circuit comprising a logic element and a register, the logic element receiving a set of input control signals from the computer system, the set of in- put control signals comprising at least one row/column address signal, bank address signals, and at least one chip-select signal, the set of input control signals corresponding to a second num- ber of DDR memory devices arranged in a second number of ranks, the second number of DDR memory devices smaller than the first number of DDR memory devices and the second number of ranks less than the first number of ranks, the circuit generating a set of output control signals in response to the set of input control signals, the set of output control signals corre- sponding to the first number of DDR memory devices arranged in the first number of ranks, wherein the circuit further responds to a first command signal and the set of input control signals from the computer system by generating and transmitting a sec- ond command signal and the set of output control signals to the plurality of memory devices, the first command signal and the set of input control signals corresponding to the second number of ranks and the second command signal and the set of output control signals corresponding to the first number of ranks; Id. at 32:66–33:23 (all emphasis added). The “second number of DDR memory devices” are the higher-density devices replaced by the lower-density “first number of DDR memory devices.” B. U.S. Patents 9,858,215 and 11,093,417 The and °417 Patents have a common disclosure. Like the °912 Patent, these patents relate “specifically to devices and methods for improving the performance, the memory capacity, or both, of memory modules.” ’215 Patent at 1:43-45; see also ’417 Patent at 1:48-50. Typically, DRAM is arranged in “ranks.” ’215 Patent at 2:41-47. During operation, those ranks are selected by address and command signals received from the processor, such as chip-select signals. /d. at 2:61-65. As shown in FIG. 2 (below), in a conventional memory module, each memory device (30a, 30b) has data lines (DQa, DQb) and a strobe line (DQSa, DQSb). The data lines (102a, 102b) are connected to a common data line (112) and the strobe lines (104a, 104b) are connected to a com- mon strobe line (114). This means the computer system is exposed to the loads of both memory devices at the same time, which can negatively affect performance. ’215 Patent at 6:60-7:13; see also id. at 9:43—-45 (“increased load on the memory bus can degrade speed performance”). TS soda so S -10La Po DOSE vgs ue SOP 0Qb | raz

FIG. 2 of the ’215 and ’417 Patents

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10 JZa f~ 40 QOSa| 1040 e 00a 114 1029 S200 OSb D 104 [30] —>- 12 ° | 1026 rs. Blam 1206 52b FIG. 4A of the ’?215 and °417 Patents

In contrast, FIG. 4A (above) shows a circuit (40) that “selectively isolates” the loads of the memory devices from the computer system. The circuit has a pair of switches (120a, 120b) on data lines (102a, 102b). Each switch can be actuated to selectively connect one or both data lines to a common data line (112). This allows a data signal to be transmitted from the memory controller to the memory devices of one or both ranks (32a, 32b) via the data lines (102a, 102b) and thereby isolate the memory devices when advantageous to do so. See generally ’215 Patent at 8:27—-S6. Notably, these patents also include the subject matter of the °912 Patent. Specifically, the description relating to FIGS. 9A—19 of the ’°215 Patent and ’417 Patent is generally the same as the description of FIGS. 1A—14 of the °912 Patent. The ’215 Patent and ’417 Patent add sections on “Load Isolation,” “Back-to-Back Adjacent Read Commands,” “Serial-Presence-Detect De- vice,” “Tied Data Strobe Signal Pins,” and “Memory Density Multiplication,” in addition to the °912 Patent’s subject matter on “Command Signal Translation.” See generally ’215 Patent at □□□□□ 13:49, 17:41-37:9. C. USS. Patents 10,268,608 The °608 Patent relates specifically to “multi-rank memory modules and methods of

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