Lone Star Silicon Innovations v. Iancu

Court of Appeals for the Federal Circuit·Decided March 25, 2020·No. 19-1669·Unpublished

Opinion

NOTE: This disposition is nonprecedential.

United States Court of Appeals for the Federal Circuit

LONE STAR SILICON INNOVATIONS LLC, Appellant

v.

ANDREI IANCU, UNDER SECRETARY OF COMMERCE FOR INTELLECTUAL PROPERTY AND DIRECTOR OF THE UNITED STATES PATENT AND TRADEMARK OFFICE, Intervenor

2019-1669

Appeal from the United States Patent and Trademark Office, Patent Trial and Appeal Board in No. IPR2017- 01566.

Decided: March 25, 2020

TIMOTHY P. MALONEY, Fitch, Even, Tabin & Flannery, Chicago, IL, argued for appellant. Also represented by NICHOLAS T. PETERS, DAVID ALLEN GOSSE.

DANIEL KAZHDAN, Office of the Solicitor, United States Patent and Trademark Office, Alexandria, VA, argued for intervenor. Also represented by MAI-TRANG DUC DANG, 2 LONE STAR SILICON INNOVATIONS v. IANCU

THOMAS W. KRAUSE, BRIAN RACILLA, FARHEENA YASMEEN RASHEED, MEREDITH HOPE SCHOENFELD.

Before LOURIE, SCHALL, and CHEN, Circuit Judges.

LOURIE, Circuit Judge Lone Star Silicon Innovations LLC (“Lone Star”) appeals from the final written decision of the Patent Trial and Appeal Board (“Board”) holding claims 2 and 7 of U.S. Patent 6,388,330 (the “’330 patent”) unpatentable as obvious. For the reasons described below, we affirm.

BACKGROUND

Lone Star is the owner of the ’330 patent, which is directed to semiconductor etch stop layers with low dielectric constants. An etch stop layer is made of material that is resistant to the process used to etch other layers of a semiconductor device and is deposited between two other layers to allow those layers to be etched separately. The invention of the ’330 patent reduces capacitive coupling between layers of metal interconnects by reducing the dielectric constant of the etch stop layers to below 5.5, in contrast to the prior art dielectric constants of 7.5 or higher.

Independent claims 1 and 6, which are not at issue in this appeal, are directed to integrated circuits comprising an “etch stop layer of silicon nitride . . . having a dielectric constant below 5.5.” ’330 patent col. 6 ll. 62–64, col. 7 ll. 22–24, col. 8 ll. 4–6. Dependent claims 2 and 7, which are at issue in this appeal, are directed to the integrated circuits of claims 1 and 6 respectively, wherein the silicon nitride etch stop layer is a “multilayer structure.” Id. col. 7 ll. 3–4, col. 8 ll. 12–13.

Micron Technology, Inc. (“Micron”) petitioned for inter partes review of claims 1, 2, 5, 6, 7, and 10. Micron asserted a single ground in its petition, namely, that the challenged

LONE STAR SILICON INNOVATIONS v. IANCU 3

claims were obvious over Watatani 1 in view of Tanaka. 2 The petition stated: “The Ground is explained below and is supported by the Declaration of Dr. Richard B. Fair.” J.A. 70.

Within that single ground, Micron asserted two separate theories regarding the prior art’s teaching of the “multilayer structure” limitation in claims 2 and 7. In its first theory, Micron contended that “Watatani expressly describes an etch stop layer that includes ‘three or more layers ’ of silicon nitride.” J.A. 105 (citing Watatani col. 7 ll. 54–55). In its second theory, Micron contended that “[s]uch multilayer silicon nitride layers were well known in the prior art,” and Micron supported this second theory with declaration testimony from its expert as well as prior art references Watatani, SST 1987, 3 and Wang. 4 See J.A. 105– 07; see also J.A. 81–82 (“It Was Well Known In The Prior Art To Form Multilayer Silicon Nitride Etch Stop Films”).

The Board instituted review of the challenged claims.

J.A. 209. For the “multilayer structure” of claims 2 and 7, the Board rejected Micron’s first theory, i.e., the theory based on the description in Watatani. J.A. 224 (“On this record, we agree with Patent Owner that Watatani does not describe an etch stop layer that includes three or more layers of silicon nitride.”). But the Board expressly

1 U.S. Patent 6,153,511. 2 Masayuki Tanaka et al., Low-k SiN Film for Cu Interconnects Integration Fabricated by Ultra Low Temperature Thermal CVD, in 1999 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 47–48 (Bus. Center for Acad. Societies Japan, 1999).

3 Novellus Sys., Continuous Process CVD System, 30 SOLID STATE TECH., no. 10, Oct. 1987, at 49–50.

4 U.S. Patent 6,017,791.

4 LONE STAR SILICON INNOVATIONS v. IANCU

acknowledged that Micron had asserted a second independent theory for the “multilayer structure” limitation:

Petitioner’s contentions regarding claims 2 and 7 are not, however, based solely on Watatani’s disclosure of multilayer etch stops. Petitioner also contends that “multilayer silicon nitride layers were well known in the prior art.”

J.A. 225. The Board found that Micron’s evidence—including the teachings of SST 1987 and Wang—was “sufficient to support its contention that multilayer silicon nitride layers were known in the art.” J.A. 226.

Lone Star filed a request for rehearing, arguing that the Board exceeded its authority by instituting review of claims 2 and 7 “based on a new ground not asserted in the Petition.” J.A. 241. The Board denied Lone Star’s request, finding that the institution decision relied on additional prior art references “in the same way” that Micron’s petition did, namely, “as evidence of the knowledge of a person of ordinary skill in the art.” J.A. 258. The Board noted that Lone Star “cites no authority for the proposition that a reference relied upon to show that a claim limitation is within the knowledge of a [person of ordinary skill in the art] must be expressly included in the list of references that denominate the ground.” J.A. 259; see J.A. 258 (“Our reliance on SST 1987, however, does not transform the instituted ground into a ‘new ground,’ as argued by Patent Owner.”).

In its patent owner response, Lone Star again raised its contention that the Board had exceeded its authority and also addressed the merits of the obviousness challenge. Micron argued in reply that the instituted ground based on Watatani, Tanaka, and the knowledge of a person of ordinary skill had been asserted in the petition. J.A. 378–80. Micron also submitted a second declaration from its expert

LONE STAR SILICON INNOVATIONS v. IANCU 5

declarant, Dr. Fair, who cited yet another reference, Yota, 5 to support his opinion that that multilayer silicon nitride films were well-known in the art. See J.A. 890–94.

Lone Star believed that portions of Micron’s reply improperly relied on new evidence, particularly those portions that relied on Dr. Fair’s citations to additional exhibits, such as Yota, that were not previously submitted with Micron’s petition. See J.A. 1483–85. The parties jointly requested permission from the Board to submit additional briefing, which the Board allowed. Id. Lone Star thus had the opportunity to submit a sur-reply in which it addressed Dr. Fair’s second declaration, including his reliance on Yota. See J.A. 397–99.

In its final written decision, the Board held all of the challenged claims, including claims 2 and 7, obvious over Watatani in view of Tanaka. J.A. 2. The Board again rejected Lone Star’s argument that the Board had exceeded its authority and again emphasized that its institution decision and final written decision properly relied on additional references like SST 1987 “in the same way as it was relied upon in the Petition: as evidence that multilayer silicon nitride layers were known in the prior art.” J.A. 42. On the merits, the Board held that Micron proved by a preponderance of the evidence that a person of ordinary skill in the art would have been motivated to use a multilayer silicon nitride structure when forming an etch stop layer and would have had a reasonable expectation of success in achieving the subject matter of claims 2 and 7. J.A. 38–39.

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