Giuliano v. SanDisk Corp.

224 F. Supp. 3d 851, 2016 U.S. Dist. LEXIS 77962, 2016 WL 7799634
CourtDistrict Court, N.D. California
DecidedApril 29, 2016
DocketCase No: C 10-2787 SBA
StatusPublished
Cited by2 cases

This text of 224 F. Supp. 3d 851 (Giuliano v. SanDisk Corp.) is published on Counsel Stack Legal Research, covering District Court, N.D. California primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
Giuliano v. SanDisk Corp., 224 F. Supp. 3d 851, 2016 U.S. Dist. LEXIS 77962, 2016 WL 7799634 (N.D. Cal. 2016).

Opinion

ORDER GRANTING DEFENDANT’S MOTION FOR SUMMARY JUDGMENT

SAUNDRA BROWN ARMSTRONG, Senior United States District Judge

Plaintiffs, Alfred T. Giuliano, Chapter 7 Trustee to the Ritz Estate; CPM Electronics, Inc. (“CPM”), E.S.E. Electronics, Inc. (“ESE”); and Mflash, Inc. (“Mflash”), bring the instant antitrust class action against SanDisk Corporation (“SanDisk”), pursuant to § 2 of the Sherman Antitrust Act, 15 U.S.C. § 2. They allege that San-Disk fraudulently obtained two patents from the United States Patent and Trademark Office (“PTO”) in order to monopolize the market for NAND flash memory. This type of antitrust claim is commonly referred to as a Walker Process claim, named for the Supreme Court’s decision in Walker Process Equipment, Inc. v. Food Machinery & Chemical Corp., 382 U.S. 172, 86 S.Ct. 347, 15 L.Ed.2d 247 (1965).

The parties are presently before the Court on SanDisk’s Renewed Motion for Summary Judgment and Motion to Exclude Opinions and Testimony of Dr. Ryan Sullivan. Dkt. 312, 313. Having read and considered the papers filed in connection with these matters and being fully informed, the Court hereby GRANTS San-Disk’s motion for summary judgment. Be[855]*855cause the Court’s ruling is not dependent on the opinions of Dr. Sullivan, SanDisk’s motion to exclude his opinions and testimony is DENIED as moot.1

I. BACKGROUND

A. Overview

NAND flash memory is a type of nonvolatile Electronically Erasable Programmable Read Only Memory (“EEp-rom”). Non-volatile memory chips are comprised of a series or array of memory cells capable of retaining data, even when power is removed from the chip. Each memory cell consists of a source, drain, floating gate and a gate (or control gate). An electrical chai’ge is applied to the control gate, which draws electrons from the source towards the drain. Along the way, some of the electrons are stored in the floating gate, where bits of data are ultimately “programmed” or stored. The electrical charge ceases once the memory cell has reached its desired programming state. To erase data, a positive charge is applied, which causes the floating gate to release its charge, and hence, erase the data. The process of continually programming and erasing data (i.e., erase/reprogram cycles) causes cell fatigue, which, over time, negatively affects the memory’s performance.

NAND flash memory comes in two forms: flash chips and final flash products. NAND flash chips can be combined with additional components, software or firmware to make final flash products that are eventually sold to consumers. NAND flash memory is incorporated into a variety of end-user products, including mobile phones, tablets, global positioning systems, portable and home gaming systems, and personal computers, Final flash products are a subset of these electronic products, and include solid state drives, memory cards, wireless memory, USB storage, embedded storage, and music and video players.

B. Disputed Patents

SanDisk designs, develops, and manufactures data storage solutions using NAND flash memory. It holds a number of patents relating to flash memory technology, including the U.S. Patent Nos. 5,172,-338 (“the ’338 patent”) and 5,991,517 (“the ’517 patent”). The ’338 patent and the ’517 patent (collectively, “Disputed Patents”) purport to improve the performance and accuracy of flash memory devices and systems. In this action, Plaintiffs allege that during the PTO’s reexamination of the ’338 patent, SanDisk misrepresented facts relating to claim 27 of the patent and withheld certain prior art references.2 They also claim that SanDisk failed to disclose those references during the subsequent prosecution of the ’517 patent. Those proceedings are discussed in greater detail below.

1. The ’388 Patent

a) Overview

The ’338 patent, entitled “Multi-state EEprom Read and Write Circuits and [856]*856Techniques,” was issued by the PTO on December 15, 1992, Chen Decl. Ex. 1 (’338 patent), at 1, Dkt. 314-1. The patent contains forty-seven claims and describes “[^Improvements in the circuits and techniques for read, write and erase of EEp-rom memory [that] enable non-volatile multi-state memory to operate with enhanced performance over an extended period of time.” ’338 patent, Abstract. San-Disk founders Harari and Mehrotra, along with Winston Lee, are the named inventors of the patent, which was assigned to SanDisk. The ’338 patent expired in December 2009.

At issue in this case is claim 27 of the ’338 patent, which recites a “means for inhibiting further programming of correctly verified cells among the plurality of addressed cells.” ’338 patent, col. 26, Ins. 28-54 (emphasis added). The purpose of this limitation is to address the issue of memory cell fatigue resulting from repeated erase/reprogram cycles. Id., col. 2, Ins. 45-48. To accomplish such goal, the claim specifies that memory cells are programmed through a series of programming pulses, which are followed by verifying pulses to determine whether the target cells have reached their desired program states. Chen Decl. Ex. 6 at 2, Dkt. 314-6. Once the cell has reached its desired program state, additional programming of that cell is inhibited or terminated for the duration of the programming cycle. Id. When all cells reach the desired program states, the program cycle terminates. Id. at 3. This process is referred to as the “program terminate” technique. M. By individually erasing only selected sectors of a cell array by inhibiting further programming of correctly verified cells, “over-erasing,” and hence, cell fatigue, is reduced. Id. Ex. 7 at 149, Dkt. 314-7; ’338 patent, col. 4, Ins. 14-16.

Figure 16 of the ’338 patent depicts the circuitry that inhibits the further programming of the memory cells:

[[Image here]]

In the circuit shown above, “721” depicts a latch that performs the function of inhibiting further programming to correctly veri-fíed cells. Generally, latches are referred to as “one-way” or “two-way” latches. A one-way latch only moves in one direction, whereas a two-way latch freely switches back and forth between two states when different values are applied. Chen Decl. Ex. 7 at 66. SanDisk claims that the latch [857]*857is a one-way latch, which provides the means for the permanent inhibit limitation. The function of latch 721—namely, whether the drawing of the latch teaches the use of a one-way or two-way latch—is disputed in this action.

b) Reexamination

In January 1996, SanDisk filed a complaint with the United States International Trade Commission (“ITC”), alleging that Samsung’s NAND flash memory products infringed, inter alia, claim 27 of the ’338 patent. In the Matter of Certain Flash Memory Circuits and Products Containing Same, ITC No. 337-TA-382 (“the 382 Investigation”).3 During the pendency of the ensuing ITC investigation, SanDisk and Samsung submitted requests to the PTO to reexamine the ’338 patent, which were granted on November 18, 1996. Chen Decl. Exs. 3, 4, 5, Dkt. 314-3, 314-4, 314-5.

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Bluebook (online)
224 F. Supp. 3d 851, 2016 U.S. Dist. LEXIS 77962, 2016 WL 7799634, Counsel Stack Legal Research, https://law.counselstack.com/opinion/giuliano-v-sandisk-corp-cand-2016.