ADE CORP. v. KLA-Tencor Corp.

252 F. Supp. 2d 40, 2003 U.S. Dist. LEXIS 4641, 2003 WL 1191741
CourtDistrict Court, D. Delaware
DecidedMarch 13, 2003
DocketCIV.A. 00-892-KAJ
StatusPublished
Cited by3 cases

This text of 252 F. Supp. 2d 40 (ADE CORP. v. KLA-Tencor Corp.) is published on Counsel Stack Legal Research, covering District Court, D. Delaware primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

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ADE CORP. v. KLA-Tencor Corp., 252 F. Supp. 2d 40, 2003 U.S. Dist. LEXIS 4641, 2003 WL 1191741 (D. Del. 2003).

Opinion

OPINION

JORDAN, District Judge.

I. INTRODUCTION

This matter is before the Court for construction of the claims in U.S. Patent No. 6,292,259 B1 (issued Sept. 18, 2001) (the “ ’259 patent”), pursuant to Markman v. Westview Instruments, Inc., 52 F.3d 967 (Fed.Cir.1995) (en banc), aff’d, 517 U.S. 370, 116 S.Ct. 1384, 134 L.Ed.2d 577 (1996). Plaintiff ADE Corporation (“ADE”) and defendant KLA-Tencor Corporation (“KLA”) own United States patents used in the silicon wafer inspection industry to detect and classify silicon wafer surface defects as either crystalline originated pit defects or particle defects. On October 10, 2000, ADE filed its complaint in this action, alleging that KLA’s products infringed its U.S. Patent No. 6,118,525 (issued Sept. 12, 2000) (the “ ’525 patent”). (D.I. 1.) KLA counterclaimed, alleging that ADE’s products infringed several of its patents, specifically U.S. Patent Nos. 5,226,118 (issued July 6, 1993); 5,883,710 (issued Mar. 16, 1999); 6,081,325 (issued June 27, 2000); and 6,215,551 (issued Apr. 10, 2001). 1 (D.I.7.) Thereafter, ADE amended its complaint, claiming that KLA is infringing the ’259 patent. (D.I. 232.) The Court’s magistrate judge previously provided an opinion recommending the proper construction of the ’525, ’118,-’710, ’325, and ’551 patents. See Ade Corp. v. KLA-Tencor Corp., 220 F.Supp.2d 303 (D.Del.2002). Those recommendations are the subject of still pending objections by both parties (see D.I. 531, 533) which are partially addressed in this opinion. 2

II. THE’259 PATENT

A. In General

The technology underlying the ’259 patent bears on the challenge of inspecting silicon wafers prior to their being manufactured into integrated circuits, also called “computer chips.” All of the patents at issue in the case relate to a strategy for addressing that challenge. As is more fully described herein, the ’259 patent teaches the use of a beam of specially polarized light that is directed at an angle to the surface of a silicon wafer or similar workpiece and manipulated to scan the surface for defects. The light deflected from the surface during the scan is then collected and analyzed to determine whether its deflection pattern is characteristic of one or the other of two types of silicon wafer defects, namely pit defects or particle defects. The distinction is important to chip manufacturers because particle defects can be cleaned off the wafer surface but pit defects, which, as the name implies, are actual flaws in the surface, cannot be. Thus, the accurate identification and classification of the two types of defects can lead to significant cost savings in the manufacturing process.

B. The ’259 Disclosure

The ’259 patent teaches a silicon wafer surface inspection system that uses a focused beam of P-polarized light to scan the *44 surface of a silicon wafer or other workpiece. (D.I. 627, ’259 Patent Prosecution File History, ’259 patent at col. 1 11.39-56.) Claim 1 of the patent is representative of the invention:

1. A surface inspection system for distinguishing between particle defects and pit defects on a surface of a workpiece comprising:
an inspection station for receiving the workpiece;
a scanner positioned to scan a surface of the workpiece at the inspection station, the scanner including a light source arranged to project p-polarized light at an angle of incidence oblique to the workpiece surface;
a first collector positioned to collect light scattered from the surface of the workpiece at a central zone;
a second collector positioned to collect light scattered from the surface of the workpiece at an oblique zone offset an-gularly from the central zone;
one or more converters for converting the collected light components into respective signals representative of the light scattered into the central zone and oblique zone; and
a system controller configured to receive the signals, compare the signals, and classify defects as pits or particles based at least in part on the comparison.

(Id. at col. 12 11.18-38.) Figures 3 and 4, reproduced below, represent the preferred embodiment, as detailed in the ’259 written description and drawings. (Id. at col. 5 1. 31 to col. 71. 5.)

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The preferred embodiment employs a multi-piece scanner (depicted as item “80” in Figure 4) arranged to scan the surface of a workpiece with a beam of P-polarized light generated from a light source (item “81” in Figures 3 and 4). The beam of P-polarized light is directed at the surface of the workpiece with a mirror (item “82”), a deflector (item “85”), and optical lenses (items “84” and “86”). (Id.) As the beam of P-polarized light scans the surface of

the workpiece, part of it refracts off the surface and is collected for analysis using a dark channel detector (item “120” in Figure 3) consisting of scattered-light collectors (items “121,” “123,” and “125”) in optical communication with and electrically connected to a forward channel detector (item “122”), a center channel detector (item “124”), and a back channel detector (item “126”). 3 (Id. at col. 7 1. 24 to col. 8 1. 24.)

*45 Figures 6 and 16, reproduced below, provide further information about the operation of the preferred embodiment.

As shown in Figure 6, the inventors specify that the placement of the three collectors (items “121,” “123,” and “125”) is determined with reference to the angle of incidence (designated as “0i” in Figure 6) of the light beam directed at the wafer surface and the angle of refraction (designated as “%0r”) of the light beam as it bounces off the wafer surface. The three collectors gather for analysis the light scattered from the wafer surface in forward, center, and backward regions. (Id.) The inventors specify a mathematical algorithm for processing the information about the scattered light (Figure 16), after it is collected in those regions. 4 The operation of that algorithm is detailed in the ’259 written description. 5

In less technical terms, the invention works by bouncing a beam of light off the wafer surface and “reading” the scatter patterns of the light as it strikes a defect.

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252 F. Supp. 2d 40, 2003 U.S. Dist. LEXIS 4641, 2003 WL 1191741, Counsel Stack Legal Research, https://law.counselstack.com/opinion/ade-corp-v-kla-tencor-corp-ded-2003.