Rockwell International Cor v. SDL, Inc.

103 F. Supp. 2d 1202, 2000 U.S. Dist. LEXIS 9247, 2000 WL 897800
CourtDistrict Court, N.D. California
DecidedJune 29, 2000
DocketC95-1729 MHP
StatusPublished
Cited by2 cases

This text of 103 F. Supp. 2d 1202 (Rockwell International Cor v. SDL, Inc.) is published on Counsel Stack Legal Research, covering District Court, N.D. California primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
Rockwell International Cor v. SDL, Inc., 103 F. Supp. 2d 1202, 2000 U.S. Dist. LEXIS 9247, 2000 WL 897800 (N.D. Cal. 2000).

Opinion

MEMORANDUM AND ORDER

PATEL, Chief Judge.

On May 22, 1995, plaintiffs Rockwell International Corporation and Rockwell Science Center, Inc. (collectively “Rockwell”) filed this action against SDL, Inc. (“SDL”) alleging infringement of United States Patent Number 4,368,098 (“the ’098 patent”). Rockwell now moves for partial summary judgment that claims 19, 30, 50, 56, and 72 are not invalid under 35 U.S.C. section 102. On a cross-motion for summary judgment, SDL seeks a ruling that, except for the elements identified by Rockwell in its present motion, all of the elements of claims 19, 30, 50, 56, and 72 are located in two prior art references.

BACKGROUND

I. Scientific Overview

The ’098 patent claims a process for making “III-V semiconductors.” This process opened the door to significant improvements in opto-electronic, photonic, and laser technologies. The process involves “chemical vapor deposition,” in which a thin film of a material is grown by transporting the constituent components of that material in a gaseous state and depositing them on a surface called a “substrate.”

The ’098 patent discloses a special type of chemical vapor deposition known as metal organic chemical vapor deposition (“MOCVD”). MOCVD combines specific gaseous reactants — one containing an element from Group III and one containing an element from Group V of the Periodic Table of Elements. These reactants are heated until “pyrolysis” takes place and the reactants break down into their constituent chemical parts. The released Group III and Group V atoms deposit on a substrate to form a III-V semiconductor film.

The MOCVD process of the ’098 patent grows “epitaxial” III-V semiconductors. Epitaxial III-V semiconductors are “single crystal” films. A single crystal solid, such as a diamond, is distinguished by the regular, repeated stacking pattern of its atoms.

MOCVD as taught by the ’098 patent takes place in a reactor. The substrate sits on a pedestal within the reactor, and pyrolysis occurs at the substrate surface. The claims of the ’098 patent require the use of a “cold-wall reactor.” The Federal Circuit affirmed the Claims Court’s holding that a cold-wall reactor is defined as a reactor in which heat is applied at the substrate site and the walls of the reactor are kept significantly cooler than the substrate. See Rockwell Int’l Corp. v. United States, 147 F.3d 1358, 1363 (Fed.Cir.1998) (hereinafter “Rockwell II ”).

II. The ’098 Patent and Prior MOCVD Processes

Plaintiff Rockwell’s ’098 patent was developed by Dr. Harold Manasevit in a Rockwell laboratory in 1967. Manasevit filed a patent application on February 13, *1204 1968. The ’098 patent ultimately issued on January 11, 1983. It has since expired.

Among the inventors who developed MOCVD processes before Manasevit were Thomas R. Scott and Walter Miederer. In 1957, Scott obtained patents from the United Kingdom and Japan that disclose the pyrolysis of a Group III alkyl (Le.trie-thylindium) and a Group V hydride (i.e.sti-bine) in a cold wall reactor. See U.KPat-ent No. 778,383; Japanese Patent 32-384 (together, “the Scott patent”). Miederer procured a U.S. patent in 1965. See U.S.Patent No. 3,226,270 (“the Miederer patent”). The Miederer patent teaches that pyrolysis of a Group III alkyl (i.e. triethylindium or trimethylgallium) and a Group V reactant such as arsine will produce a III-V semiconductor.

III. Procedural History

Rockwell brought an action in the United States Court of Federal Claims against the United States on August 30, 1993, alleging infringement of several of its ’098 patent claims and identifying a number of government contractors, including SDL, who purportedly participated in the infringement. In May 1995, Rockwell sued SDL for infringement of the same patent in this court. SDL immediately intervened in the Claims Court action as a third-party defendant. This action was suspended pending disposition of the Claims Court case.

The Claims Court decided to try Rockwell’s action in three phases. See Rockwell Int’l Corp. v. United States, 37 Fed. Cl. 478, 480-81 (Fed.Cl.1997) (hereinafter “Rockwell I”). In the first phase, the court addressed claim construction and validity. The Claims Court construed certain disputed terms in Rockwell’s favor. Rockwell asked the Claims Court to rule on summary judgment that claims 1 and 3 were not invalid. Defendants filed cross motions that these claims were anticipated under 35 U.S.C. section 102 and obvious under 35 U.S.C. section 103. The Claims Court granted summary judgment on obviousness. However, the court found that material issues of fact precluded summary judgment on anticipation. See Rockwell I, 37 Fed.Cl. at 502. The Federal Circuit reversed in part and affirmed in part. See Rockwell II, 147 F.3d at 1367. It reversed the obviousness ruling, finding that genuine issues about the content of the prior art precluded a determination of obviousness on summary judgment. See id. at 1365. The Federal Circuit upheld the lower court’s holdings on claim construction and anticipation.

Shortly after the case was remanded, the United States settled with Rockwell, agreeing to the entry of judgment in favor of Rockwell. This settlement deprived the Claims Court of jurisdiction over the dispute between Rockwell and SDL. On January 13, 1999, pursuant to the parties’ request, this court lifted the stay and reopened the action here.

In a February 9, 2000 order, this court granted Rockwell’s motions for partial summary judgment that the work of Dr. Robert Stearns is not prior art pursuant to 35 U.S.C. sections 102 and 103 and that SDL has infringed claims 19, 30, 35, 36, 50, 56, 57, and 72 of the ’098 patent. Now before the court is Rockwell’s motion for partial summary judgment that claims 19, 30, 50, 56, and 72 are not anticipated under 35 U.S.C. section 102. Also before the court is SDL’s cross motion for summary adjudication that, with the exception of the elements identified by Rockwell in its present motion, the Scott and Miederer patents encompass all of the elements of claims 19, 30, 50, 56, and 72.

LEGAL STANDARD

Under Federal Rule of Civil Procedure 56, summary judgment shall be granted “against a party who fails to make a showing sufficient to establish the existence of an element essential to that party’s case, and on which that party will bear the burden of proof at trial ...

Free access — add to your briefcase to read the full text and ask questions with AI

Related

W.L. Gore & Associates, Inc. v. C.R. Bard, Inc.
146 F. Supp. 3d 595 (D. Delaware, 2015)
Roche Diagnostics Corp. v. Selfcare Inc.
233 F. Supp. 2d 1038 (S.D. Indiana, 2002)

Cite This Page — Counsel Stack

Bluebook (online)
103 F. Supp. 2d 1202, 2000 U.S. Dist. LEXIS 9247, 2000 WL 897800, Counsel Stack Legal Research, https://law.counselstack.com/opinion/rockwell-international-cor-v-sdl-inc-cand-2000.