Raytheon Company v. Sony Corporation

CourtCourt of Appeals for the Federal Circuit
DecidedApril 2, 2018
Docket17-1554
StatusUnpublished

This text of Raytheon Company v. Sony Corporation (Raytheon Company v. Sony Corporation) is published on Counsel Stack Legal Research, covering Court of Appeals for the Federal Circuit primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
Raytheon Company v. Sony Corporation, (Fed. Cir. 2018).

Opinion

NOTE: This disposition is nonprecedential.

United States Court of Appeals for the Federal Circuit ______________________

RAYTHEON COMPANY, Appellant

v.

SONY CORPORATION, SAMSUNG ELECTRONICS CO., LTD., SAMSUNG ELECTRONICS AMERICA, INC., SAMSUNG SEMICONDUCTOR, INC., Appellees ______________________

2017-1554, 2017-1556, 2017-1557 ______________________

Appeals from the United States Patent and Trade- mark Office, Patent Trial and Appeal Board in Nos. IPR2015-01201, IPR2016-00209, IPR2016-00962. ______________________

Decided: April 2, 2018 ______________________

JOHN J. MOLENDA, Steptoe & Johnson, LLP, New York, NY, argued for appellant. Also represented by JOHN LLOYD ABRAMIC, THOMAS J. FILARSKI, Chicago, IL; FANG BU, Washington, DC.

MATTHEW A. SMITH, Smith Baluch LLP, Washington, DC, argued for all appellees. Appellee Sony Corporation also represented by ANDREW BALUCH; ROBERT LOUIS 2 RAYTHEON COMPANY v. SONY CORPORATION

HAILS, JR., T. CY WALKER, Baker & Hostetler LLP, Wash- ington, DC; ZHUANJIA GU, JENNIFER SERAPHINE, JACOB ZWEIG, Turner Boyd LLP, Redwood City, CA.

RONALD J. PABIS, Greenberg Traurig LLP, Washing- ton, DC, for appellees Samsung Electronics Co., Ltd., Samsung Electronics America, Inc., Samsung Semicon- ductor, Inc. Also represented by MARK G. DAVIS, PATRICK J. MCCARTHY, STEPHEN K. SHAHIDA; RICHARD A. EDLIN, New York, NY; HEATH BRIGGS, Denver, CO. ______________________

Before LOURIE, O’MALLEY, and WALLACH, Circuit Judges. O’MALLEY, Circuit Judge. Raytheon Company (“Raytheon”) appeals from final written decisions in two inter partes review (“IPR”) pro- ceedings, in which the Patent Trial and Appeal Board (“Board”) held all claims of U.S. Patent No. 5,591,678 (“’678 patent”) unpatentable. See Sony Corp. v. Raytheon Co., IPR2015-01201, 2016 Pat. App. LEXIS 13452 (P.T.A.B. Nov. 30, 2016) (“1201 Decision”); Sony Corp. v. Raytheon Co., IPR2016-00209, -00962, 2016 Pat. App. LEXIS 13045 (P.T.A.B. Nov. 30, 2016) (“209 Decision”). For the following reasons, we affirm. I. BACKGROUND A. The ’678 Patent Entitled “Process of Manufacturing a Microelectric Device Using a Removable Support Substrate and Etch- Stop,” the ’678 patent is directed to purported advances in the manufacture of stacked semiconductors found in everyday electronic devices. The patent expired before the IPR proceedings at issue were initiated, and claims priority to an application filed on January 19, 1993. Rather than employ a conventional “front-side” fabri- cation process, whereby microelectronic circuits are RAYTHEON COMPANY v. SONY CORPORATION 3

formed and substrates are stacked on top of a wafer, the ’678 patent employs a “back-side” process, whereby many of the fabrication steps are performed on the bottom of the wafer. ’678 patent, col. 2, ll. 29–37. As shown in box 24 of Figure 1 below, a first, multi-layer substrate 40 contain- ing circuitry 50 is attached to the bottom of a second substrate 58, which provides mechanical support for the wafer and circuitry. Id. col. 4, ll. 22–52; id. col. 5, ll. 15– 44.

Id. fig.1. (boxes 24, 28). Once the wafer and circuitry are supported, the back side of the first substrate is removed. Id. col. 5, ll. 45–51. Finally, as shown in box 28 of Figure 1, various back-side electrical connections are formed through the remaining portion of the first substrate. Id. col. 6, ll. 10–15, 44–49. This fabrication method allows electrical connections to be made through the device rather than around the sides thereof—making the device more compact—while using the second substrate to protect the fragile wafer and circuitry from damage during fabrication. Id. col. 1, l. 50 to col. 2, l. 2; id. col. 2, ll. 32–37; id. col. 2, l. 59 to col. 3, l. 14. Additional substrates may be sequentially stacked on the back side of the resulting structure to achieve a three- dimensional device containing an arbitrarily large num- ber of layers. See id. col. 3, ll. 38–40; id. col. 7, ll. 14–17, 60–65. Dependent claim 5 is representative and recites— through its dependence from claim 1—the method de- scribed above using silicon-based materials: 4 RAYTHEON COMPANY v. SONY CORPORATION

1. A method of fabricating a microelectronic de- vice, comprising the steps of: furnishing a first substrate having an etchable layer, an etch-stop layer overly- ing the etchable layer, and a wafer overly- ing the etch-stop layer; forming a microelectronic circuit element in the exposed side of the wafer of the first substrate opposite to the side overlying the etch-stop layer; attaching the wafer of the first substrate to a second substrate; and etching away the etchable layer of the first substrate down to the etch-stop layer. .... 5. The method of claim 1, wherein the etchable layer is silicon, the etch-stop layer is silicon diox- ide, and the wafer is single-crystal silicon. Id. col. 8, ll. 5–16 (emphasis added), 30–32. B. The Prior Art Three prior art references are at issue on appeal: (1) U.S. Patent No. 4,422,091 to Liu (“Liu”), (2) U.S. Patent No. 5,202,754 to Bertin (“Bertin”), and (3) Japanese Unexamined Patent Application Publication No. 64-18248 to Morimoto (“Morimoto”). Liu issued in 1983 and therefore qualifies as prior art to the ’678 patent under pre-AIA § 102(b). Liu describes a gallium arsenide, multi-layer charge coupled device (“CCD”) for detecting electromagnetic radiation, as well as a method of fabrication. Liu at Abstract; id. at col. 2, 7– 18. RAYTHEON COMPANY v. SONY CORPORATION 5

Bertin issued several months after the priority date of the ’678 patent, but was filed sixteen months prior there- to, on September 13, 1991, and therefore nominally quali- fies as prior art under pre-AIA § 102(e). Bertin discloses “[a] fabrication method and resultant three-dimensional multichip package” containing several layers of silicon- based material. Bertin at Abstract; id. col. 1, ll. 10–15; id. col. 1, l. 55 to col. 2, l. 31; id. col. 3, ll. 4–46. Finally, Morimoto published in 1989 and therefore qualifies as prior art under pre-AIA § 102(b). Morimoto discloses “a method for manufacturing semiconductor devices” containing multiple layers. J.A. 115–16. 1 One of those layers is a “supporting silicon substrate,” which Morimoto teaches is removed during the fabrication process. See J.A. 116 (explaining that a “two-layer active layer structure is formed” by, among other things, bond- ing a “supporting silicon substrate” to an insulating film, performing additional steps, and then “removing the supporting silicon substrate” (emphasis added)). C. Procedural History Appellees Sony Corporation, Samsung Electronics Co., Ltd., Samsung Electronics America, Inc., and Samsung Semiconductor, Inc. (collectively, “Sony”) filed a series of IPR petitions against Raytheon’s ’678 patent, which were consolidated into the two proceedings at issue here. In its final written decisions, the Board held in rele- vant part all claims unpatentable under pre-AIA 35 U.S.C. § 103 as obvious over the prior art of record. See 209 Decision, 2016 Pat. App. LEXIS 13045, at *33–64; 1201 Decision, 2016 Pat. App. LEXIS 13452, at *43–69. Sony appealed with respect to claims 5, 13–14, and 16–18

1 We cite here to the certified English translation of Morimoto included in the joint appendix. See J.A. 115–19. 6 RAYTHEON COMPANY v. SONY CORPORATION

only. We have jurisdiction under 28 U.S.C. § 1295(a)(4)(A). II. DISCUSSION Raytheon makes three principal arguments on appeal. First, Raytheon asserts that the Board failed to address its argument that using silicon in Liu’s devices would render them inoperable. Second, Raytheon argues that the Board erred in finding that it failed to antedate Ber- tin.

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