NEC Corp. v. HYUNDAI ELECTRONICS INDUSTRIES CO.

30 F. Supp. 2d 561, 1998 U.S. Dist. LEXIS 19146, 1998 WL 854789
District Court, E.D. Virginia·Decided December 7, 1998·No. C.A. 97-1967, 97-1968, 97-1969, 97-2031, 98-118·Published

Opinion

MEMORANDUM OPINION

ELLIS, District Judge.

Twenty patents covering different semiconductor circuitry devices and fabrication processes are at issue in these consolidated patent infringement actions, twelve of which are asserted by NEC Corporation and eight of which are asserted by Hyundai Electronics Industries Co. 1 Now before the Court is defendants’ motion for summary judgment on the issue of infringement of NEC’s U.S. Patent No. 4,322,825 (the ’825 patent). The ’825 patent, entitled “Flexible Hidden Refresh Memory Circuit,” relates to a method for refreshing the values stored in the memory cells of Dynamic Random Access Memory devices (DRAMs). At issue are three “means plus function” limitations in claim 1 of the patent. Disposition of these motions requires claim construction under Markman v. Westview Instruments, Inc., 517 U.S. 370, 116 S.Ct. 1384, 134 L.Ed.2d 577 (1996), which, in turn, leads to the conclusion that remaining disputed factual issues preclude summary judgment on the issue of infringement.

I. The ’825 Patent

A DRAM is a basic type of memory chip that stores logic information in the form of binary digits, or “bits.” A bit may have a *564 value of either “1” or “0.” Each individual memory cell within a DRAM stores an electrical charge that determines the value of the bit. The cells are connected to the circuitry outside the memory array through a grid of electrical lines known as “bit lines” and “word lines,” with each word line identified by a unique “row address” and each bit line identified by a unique “column address.” An individual memory cell can be accessed by presenting the DRAM with the unique address combination corresponding to the cell’s location.

Individual memory cells are selected by means of electrical signals generated outside the DRAM. In general, these externally-generated signals include the row address strobe (RAS*) and the column address strobe (CAS*). In normal DRAM operations, a memory cell is selected by (i) inputting a row address to the DRAM; (ii) activating the row address strobe, thus selecting the single word line corresponding to the row address; (iii) inputting a column address to the DRAM; and (iv) activating the column address strobe, thus selecting the single bit line corresponding to the column address.

Information in the form of electrical charge passes into and out of a selected memory cell through its corresponding bit line. During a “read” operation, the charge stored in the memory cell passes onto the bit line which carries it outside of the memory cell array to be read as either “1” (a high charge) or “0” (a low charge). In a “write” operation, an electrical signal from outside the memory array passes along the bit line to be stored in the memory cell as either a “1” or a “0.” Whether an accessed cell is subjected to a read or write operation is generally determined by an externally-generated signal called “write enable” (WE*); if write enable is activated, a write operation will be completed, while a read operation will be completed if it is inactive.

DRAM memory cells can only store their charges for a finite period of time, and so these cells must have their values restored from time to time or the data stored within the memory cell may be corrupted. This operation is called “refresh.” A refresh operation may be conducted in each memory cell in a given word line simultaneously. When a word line is selected through a read or write operation, the charge stored in each memory cell in the row passes to its attached bit line. A sense amplifier connected to each bit line detects whether a “1” or a “0” is stored in the particular memory cell. If the detected charge is a “1” (high), the sense amplifier operates to increase the charge stored on the memory cell capacitor to the originally stored value, while if the measured value is “0” (low), the sense amplifier causes electric charge on the memory cell capacitor to be decreased to the originally stored low value.

“Hidden” refresh allows the logic value stored in a particular memory cell to be presented and maintained at the DRAM’s data output mechanism while simultaneously, all of the other memory cells in that row are accessed and refreshed. The data from the original read operation remains at the output terminal and available to the computer throughout the entire period. The. operation is. “hidden” in that it does not obviously interrupt the normal operation of the device.

The ’825 patent was not the first device to accomplish hidden refresh. In hidden refresh devices that preceded the ’825 patent, however, the “write enable” signal had to be inactive throughout the refresh operation or data at the output terminal might be corrupted. The ’825 patent is designed to control the hidden refresh operation using only the row address strobe and the column address strobe, regardless of the presence or absence of any other inputs such as “write enable.” Essentially, the ’825 patent provides for circuitry that isolates the circuits at the output pin from the rest of the output-input circuitry after the initial read operation has taken place and before the refresh operation has begun. As a result, the data at the output terminal remains undisturbed while the memory cells are refreshed.

The invention is accomplished by manipulating the column address strobe, which in turn governs a control signal. The function of this control signal is to enable what is described in claim 1 of the ’825 patent as a “digit control means for selectively deriving logic information from [the] digit lines based *565 on the incorporated column address information.” Claim 1 of the ’825 patent specifies a timing sequence which, in essence, requires that the control signal be (i) “set” at the time when data from the initial read operation becomes available; (ii) “reset” when that data is no longer available; and (ii) “suppressed” during subsequent cycles. Thus, when information is to be read to the output, a control signal produced by the DRAM’s timing circuits turns on transistors that complete the connection between the output amplifier and the output circuitry. After the initial read operation, the control signal is turned off (“reset”), disabling the transistors and isolating the output circuitry from the rest of the data path. Since this control signal is suppressed during the hidden refresh operation, the output pin remains isolated and the data on the output pin remain valid throughout the refresh operation.

II. Claim Construction

NEC claims that certain Hyundai memory devices infringe claim 1 of the ’825 patent. Hyundai denies its devices infringe the ’825 patent either literally or equivalently. Central to the disposition of this dispute is the construction of three “means plus function” limitations within claim 1:

(1) “digit control means for selectively deriving logic information from said digit lines based on the incorporated column address information” (the “digit control means”);

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NEC Corp. v. HYUNDAI ELECTRONICS INDUSTRIES CO., 30 F. Supp. 2d 561, 1998 U.S. Dist. LEXIS 19146, 1998 WL 854789 (E.D. Va. 1998).

30 F. Supp. 2d 561 (NEC Corp. v. HYUNDAI ELECTRONICS INDUSTRIES CO.) — published by Counsel Stack Legal Research, free access to 12M+ legal documents.

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