In Re Flash Memory Antitrust Litigation

643 F. Supp. 2d 1133, 2009 U.S. Dist. LEXIS 38941, 2009 WL 1096602
CourtDistrict Court, N.D. California
DecidedMarch 31, 2009
DocketCase C 07-0086 SBA
StatusPublished
Cited by51 cases

This text of 643 F. Supp. 2d 1133 (In Re Flash Memory Antitrust Litigation) is published on Counsel Stack Legal Research, covering District Court, N.D. California primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
In Re Flash Memory Antitrust Litigation, 643 F. Supp. 2d 1133, 2009 U.S. Dist. LEXIS 38941, 2009 WL 1096602 (N.D. Cal. 2009).

Opinion

ORDER DENYING DEFENDANTS’ MOTION TO DISMISS DIRECT PURCHASER COMPLAINT AND GRANTING IN PART AND DENYING IN PART DEFENDANTS’ MOTION TO DISMISS INDIRECT PURCHASER COMPLAINT

Docket Nos. 370-374, 376, 379, 382, 454.

SAUNDRA BROWN ARMSTRONG, District Judge.

This consolidated antitrust class action arises from an alleged horizontal price fixing conspiracy between various manufacturers, sellers and distributors of flash memory. Flash memory is a type of electronic memory chip that has become commonplace in a variety of electronic products, such as USB drives, digital cameras, iPhones and similar products. Two separate civil Complaints are pending. The first is the Consolidated Direct Purchaser Class Action Complaint (“Direct Purchaser Complaint”), brought by those who purchased flash memory directly from Defendants. The second is the Indirect Purchaser Plaintiffs’ Consolidated Class Action Complaint (“Indirect Purchaser Complaint”), filed by individuals and entities who purchased both stand-alone flash memory products and products that contain flash memory as a component. Both Complaints allege violations of section 1 of the Sherman Act, 15 U.S.C. § 1. The Indirect Purchaser Complaint also includes antitrust, consumer protection and equitable claims under the laws of various states.

The parties now are before the Court on: (1) the Motion by All Defendants to Dismiss Direct Purchasers’ Sherman Act Claims (Docket 371); and (2) the Motion to Dismiss Indirect Purchaser Plaintiffs’ Consolidated Class Action Complaint (Docket 374). 1 Having read and considered the papers submitted, and being fully informed, the Court DENIES Defendants’ motion to dismiss the Direct Purchaser Complaint and GRANTS IN PART and DENIES IN PART Defendants’ motion to dismiss the Indirect Purchaser Complaint.

I. BACKGROUND

A. Overview of the Development of THE FLASH MEMORY MARKET

There are several types of memory used in or with electronic devices; most notably, *1139 flash memory, dynamic random access memory (“DRAM”) and static random access memory (“SRAM”). Flash memory was initially developed in the 1980s by Defendant Toshiba. (Direct Purchaser (“DP”) Compl. ¶ 40.) 2 Unlike DRAM and SRAM, flash memory is “non-volatile,” meaning that no power is needed to maintain the information stored in the chip. (Id. ¶ 39.) The first generation of flash memory was known as NOR flash memory. (Id.) In 1987, Toshiba developed a second type of flash memory — NAND flash memory — which provided greater functionality at a lower cost. (Id. ¶¶41-43.) NAND flash memory is sold and marketed as a memory device, i.e., flash memory cards, USB drives, etc., and as a component part in other electronic devices, like Apple iPods or iPhones. (Id.)

According to Plaintiffs, the NAND flash memory industry exhibits a number of characteristics that have facilitated the alleged conspiracy to control pricing. (Id. ¶ 44.) The NAND flash memory market is highly concentrated and is dominated by a “handful” of suppliers, i.e., Samsung, Toshiba, Renesas, Hynix and Micron. (Id. ¶ 45.) Over 90 percent of the worldwide market for flash memory is controlled by three companies, Samsung, Toshiba and Hynix. (Id. ¶ 46.) In addition, there are significant barriers to entry, as the cost to develop a modern NAND flash memory production facility can range from $4 to $5 billion. (Id. ¶ 48.) The flash memory industry also is notable for its numerous cross-licensing and joint venture agreements that have spanned from the mid-1990s at least through the end of 2007. (Id. ¶ 49.) These agreements, along with the Defendants’ participation in various trade associations and meetings, ostensibly have facilitated their ability to collude and control flash memory prices. (Id. ¶ 50-59.)

B. Collusion in the Market for Electronic Memory

Apparent price fixing in the memory market has caught the attention of the United States Department of Justice (“DOJ”) which has launched investigations into the DRAM and SRAM markets. (Id. ¶¶ 60-65.) In the DRAM matter, Hynix and Samsung, who also are Defendants in this case, have pleaded guilty to price fixing, and have paid fines in the amount of $300 million and $185 million, respectively. (Id. ¶ 60.) Defendants Hynix, Mitsubishi, Renesas, Samsung and Toshiba also are under investigation by the DOJ and/or are the subject of civil lawsuits relating to SRAM. (Id. ¶ 62.)

Plaintiffs allege that the illegal pricing activity with respect to DRAM and SRAM is probative of and intertwined with Defendants’ allegedly illegal activities in the market for NAND flash memory. (Id. ¶¶ 65, 78.) Like the DRAM/SRAM schemes, the purpose and goal of the conspiracy was to (a) coordinate pricing among competitors, (b) stabilize prices to ensure that they did not fall too low, and (c) raise prices when opportunities arose. (Id. ¶¶ 72-74.) In terms of its impact, the alleged conspiracy has artificially impacted prices for both NAND flash memory and products using such technology. (Id. ¶¶ 75-77.) As a commodity item, NAND flash memory is “highly price elastic” and subject to steep price declines as technology continues to advance. (Id.) Despite these market forces, manufacturers have been able to maintain their margins through artificially controlling the market. (Id.)

*1140 In terms of overlap, Plaintiffs aver, inter alia, that the same employees of the Defendant companies (including those who pleaded guilty to criminal felonies in the DOJ’s DRAM investigation) were responsible for pricing DRAM, SRAM and flash memory sold in the United States. (Id. ¶¶ 67-69.) These persons allegedly communicated with one another on a regular basis, which helped them to coordinate and control pricing across memory product lines. (Id. ¶¶ 79-81.) For instance, in 2001, the price for NAND flash memory, like DRAM pricing, experienced a decline in demand. (Id. ¶ 86.) But through their continuing communications and contacts, in the next quarter Defendants were able to increase DRAM and NAND flash memory prices. (Id.) These “intercompetitor contacts” continued during the 2002 to 2006 time period, as evidenced by a number of emails from Samsung and other Defendants suggesting ways to maintain pricing. (Id. ¶¶ 89, 91-95.) Defendants allegedly continued their practice of entering into joint venture and cross-licensing agreements as yet another means to control the market. (Id. ¶¶ 106-108.)

In or about September 2007, the DOJ confirmed that it was investigating potential antitrust violations with respect to the NAND flash memory market. (Id.

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643 F. Supp. 2d 1133, 2009 U.S. Dist. LEXIS 38941, 2009 WL 1096602, Counsel Stack Legal Research, https://law.counselstack.com/opinion/in-re-flash-memory-antitrust-litigation-cand-2009.