Impinj, Inc. v. NXP USA, Inc.

District Court, N.D. California·Decided September 16, 2021·No. 4:19-cv-03161-YGR·Unknown

Opinion

IMPINJ, INC., CASE NO. 4:19-cv-3161-YGR

Plaintiff, CLAIM CONSTRUCTION ORDER vs. Re: Dkt. No. 77 Defendant.

Plaintiff Impinj, Inc. (“Impinj”) brings this patent infringement action against defendant NXP USA, Inc. (“NXP”), alleging that NXP infringes, inter alia, U.S. Patent Nos. 9,633,302 (the “’302 Patent”) and 9,495,631 (the “’631 Patent”). Now before the Court are the parties’ claim construction disputes. Having carefully considered the papers submitted, the parties’ arguments presented at the claim construction hearing on July 23, 2021, and the pleadings in this action, and for the reasons set forth below, the Court hereby adopts the constructions set forth herein. The ’302 and ’631 Patents are both directed to radio-frequency identification (“RFID”) tags. (See, e.g., ’302 Patent at Abstract.) The ’302 Patent relates to improved shape for RFID tag attachment. (Id.) In prior art RFID tags, an integrated circuit (“IC”) is attached to an inlay using an adhesive placed between two “contact islands,” which are shown below. (Id. at 15:61-16:61.) The adhesive, however, may exert force and propagate unevenly during attachment, which may create misalignment between the IC and the substrate. (Id. at 16:21-54.) To deal with this issue, l 1156“ 1182 1218 WIDENED CHANNEL PORTIC □□□ cme enn es an femme nnn 1210 _ 1252 1142 4144 Ic Se Vee 2 Nr "Ef" Tae □ Kf □□□ ss = Pp 4 fT □□□□□□□ 3 fone | □ fs ee | ! La 4 (= Pf tle SHAPED

' 4110- . oy ve CONTACT PAD ey 1 es 6 Upscencnecanca iN | 1254 1154 cia A Le porn WIDENED CHANNEL PORTIO

8 9 Ud. at Fig. 11 (prior art channel configuration), Fig. 12 (claimed channel configuration).) 10 As shown above, the claimed channel “has a relatively narrow portion near the center of 11 channel” and “relatively widened channel . . . near the ends of the channel.” (/d. at 17:3-10.) The «3 12 || channel is “substantially symmetric about one or more planes.” (/d. at 17:17-24.) This channel

13 shape “may facilitate the flow of the fluid adhesive from the center out to the ends of channel 1216

□ 14 by decreasing the velocity of the propagating adhesive . . . within the widened channel portions. 15 (Id. at 17:26-34.) This “may reduce the overall force exerted by the adhesive” and “thereby

Q 16 || reduc[e] the likelihood and magnitude of... misalignment.” (/d. at 17:34-40.)

17 Claim 1 of the °302 Patent recites: 18 A Radio Frequency Identification (RFID) integrated circuit (IC) comprising: 19 an IC substrate; 20 a first antenna contact disposed on, and confined within a perimeter of, a surface of 21 the IC substrate; and 22 a second antenna contact disposed on, and confined within the perimeter of, the 23 surface of the IC substrate; wherein: 24 the first and second antenna contacts are separated by a channel having a first end, a second end opposite the first end, and a center between the first 25 end and the second end; 26 the channel spans a majority of a width of the IC substrate; 27 a first transverse channel cross-section at the first end is substantially the 28 same size as a second transverse channel cross-section at the second end

and substantially larger than a third transverse channel cross-section at the center; and the channel is shaped to facilitate a fluid flow from the center to the first and second ends. The ’631 Patent relates to manufacturing methods for forming contact pads. (’631 Patent at Abstract.) Rather than using an adhesive, the ’631 Patent contemplates “mounting” the RFID IC unto the inlay by pressing them together. (Id. at 7:42-55.) The mounting force may “vary from tag to tag,” which also “affect[s] the electrical properties and performance of the completed tag.” (Id. at 7:48-51.) Thus, the ’631 Patent proposes to form a “nonconductive repassivation layer” on the RFID tag to “mitigate[] parasitic capacitance variations . . . by ensuring a fixed distance between these circuits and the contact pads.” (Id. at 8:10-21.) This takes place in four steps. First, the IC is fabricated on the wafer. (Id. at 16:43-46.) Second, a repassivation layer is deposited on the wafer. (Id. at 16:46-50.) Third, a “conductive redistribution layer” is deposited on the repassivation layer and patterned to form contact pads. (Id. at 16:47-53.) Fourth, a masking layer is applied to the wafer and patterned. (Id. at 16:54-56.) Fifth, the wafer is etched. (Id. at 16:58-60.) Finally, a stripping process removes the masking layer and any portion of the repassivation layer not protected by the conductive repassivation layer. (Id. at 16:60-64.) This results in raised “contact islands” having a protective repassivation layer. (Id.; see also id. at Figs. 13-14, 15:11-16:4.) Claim 13 of the ’631 Patent recites:

Radio Frequency Identification (RFID) integrated circuit (IC) comprising:

a plurality of contact islands raised from a surface of the IC and separated from each other by at least one trench, the at least one trench spanning at least a width of an adjacent contact island, and the contact islands covering substantially an entire surface area of the IC except for the at least one trench, wherein each contact island includes: a nonconductive repassivation layer disposed on the surface of the IC;

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Impinj, Inc. v. NXP USA, Inc., (N.D. Cal. 2021).

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