Atmel Corporation v. Information Storage Devices, Inc.

198 F.3d 1374, 53 U.S.P.Q. 2d (BNA) 1225, 1999 U.S. App. LEXIS 34441
CourtCourt of Appeals for the Federal Circuit
DecidedDecember 28, 1999
Docket20-1112
StatusPublished
Cited by185 cases

This text of 198 F.3d 1374 (Atmel Corporation v. Information Storage Devices, Inc.) is published on Counsel Stack Legal Research, covering Court of Appeals for the Federal Circuit primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
Atmel Corporation v. Information Storage Devices, Inc., 198 F.3d 1374, 53 U.S.P.Q. 2d (BNA) 1225, 1999 U.S. App. LEXIS 34441 (Fed. Cir. 1999).

Opinions

Opinion of the court filed by Circuit Judge LOURIE. Dissenting opinion filed by Chief Judge MAYER.

LOURIE, Circuit Judge.

Atmel Corporation appeals from the decision of the United States District Court for the Northern District of California granting summary judgment to Informa[1376]*1376tion Storage Devices, Inc. (“ISD”) that claim 1 of Atmel’s patent, U.S. Patent 4,511,811, is invalid for indefiniteness. See Atmel Corp. v. Information Storage Devices, Inc., No. C-95-1987-FMS, 1998 WL 184274 (N.D.Cal. Apr.14, 1998). Because the district court erred by failing to consider the knowledge of one skilled in the art that indicated that the specification disclosed sufficient structure to satisfy 35 U.S.C. § 112, ¶ 2, we reverse and remand.

BACKGROUND

The ’811 patent pertains to an improved “charge pump” circuit which is able to boost the voltage applied to, for example, a word line in a memory array during a programming operation without excessive current leakage. Claim 1, the sole claim of the patent, reads as follows:

1. An apparatus for selectively increasing the voltage on one or more of a plurality of conductive lines having inherent distributed capacitance disposed in a semiconductor circuit comprising:

means disposed on said semiconductor circuit for selecting one or more of said conductive lines;
high voltage generating means disposed on said semiconductor circuit for generating a high voltage from a lower voltage power supply connected to said semiconductor circuit;
voltage pulse generating means disposed on said semiconductor circuit for generating voltage pulses;
means for capacitively coupling voltage pulses from said voltage pulse generating means to a voltage node in said semiconductor circuit;
transfer means responsive to said selecting means and connected to said voltage node for transferring increments of charge from said high voltage generating means to the inherent distributed capacitance in selected ones of said conductive lines in response to said voltage pulses;
said transfer means including switching means cooperating with said selecting means for blocking substantially all of the flow of current through and transfer of charge from said high voltage generating means to said conductive lines which are unselected.

’811 patent, col. 8,ll. 17-45 (emphasis added).

In June 1995, Atmel filed a complaint in the district court alleging that ISD was liable for infringement of claim 1. See Atmel Corp. v. Information Storage Devices, Inc., 997 F.Supp. 1210, 1214 (N.D.Cal.1998). In November 1997, ISD moved for summary judgment that, inter alia, claim 1 was indefinite under § 112, ¶ 2,1 alleging that the specification failed to disclose any structure corresponding to the disputed high-voltage means limitation. See id. ISD further requested that the district court simultaneously consider its motion along with the court’s claim construction. See id. After ruling that it would be more efficient to construe the claims before ruling on validity, see id., the court proceeded to construe claim 1.

The district court first held, as a matter of law, that the disputed limitation is expressed in means-plus-function format under 35 U.S.C. § 112, ¶ 6.2 See id. at 1227. Neither party appeals this ruling. The [1377]*1377court then observed that the portion of the specification that pertains to the structural component of this means-plus-function limitation discloses that:

[Tjhe present invention may include high-voltage generator circuit 34. Known Circuit techniques are used to implement high-voltage circuit 34. See On-Chip High Voltage Generation in NMOS Integrated Circuits Using an Improved Voltage Multiplier Technique, IEEE Journal of Solid State Circuits, Vol[.] SC-11, No. 3, June 1976 [the “Dickson article”].

’811 patent, col. 4, 11. 56-63. The district court also noted that Figures 2 and 4 of the ’811 patent only depict the high-voltage generator circuit as a “black box,” see At-mel, 997 F.Supp. at 1227, ie., they provide no detail as to what electrical components, e.g., transistors, resistors, or capacitors, comprise that circuit.3 The district court then held that, based on the language in the written description set forth above, “the structure corresponding to the high voltage generating means cannot be any circuits beyond those described in the Dickson article.” Id. For the district court, the resolution of the case turned on the permissibility of incorporating structures corresponding to the high-voltage means limitation by reference to material not in the specification. The court requested further briefing on this issue prior to ruling on ISD’s motion for summary judgment. See id. at 1230.

After receiving this briefing, the court adopted the rule set forth in the version of the Manual of Patent Examining Procedure (MPEP), § 608.01(p), in effect at the time the patent application was filed.4 See Atmel, 1998 WL 184274, at *2-*3. In relevant part, that section states that material “necessary to ... support the claims” may not be incorporated by reference to a nonpatent publication. MPEP § 608.01(p) (4th ed., Rev.8, 1981). Interpreting such “essential material” to include the structure corresponding to a means-plus-function limitation, the court concluded that the ’811 patent improperly incorporated structure corresponding to the high-voltage means limitation by reference to the Dickson article; accordingly, the district court disregarded the structures disclosed in that publication. See Atmel, 1998 WL, 184274, at *3. In view of its prior holding that the structures corresponding to the high-voltage means limitation were limited by the specification itself to those set forth in the Dickson article, see Atmel, 997 F.Supp. at 1227, the court held that the resulting absence of any structure in the specification corresponding to the disputed limitation rendered the claim invalid as indefinite under 35 U.S.C. § 112, ¶ 2. See Atmel, 1998 WL 184274, at *3 (citing In re Dossel, 115 F.3d 942, 946, 42 USPQ2d 1881, 1884-85 (Fed.Cir.1997)).

The district court then rejected ISD’s argument that it should determine whether the claim was indefinite based on the way the disclosure would be understood by one skilled in the art, not on the “technical form” of the specification. See Atmel, 1998 WL 184274, at *3. In disregarding Atmel’s expert testimony in support of its argument, the court concluded that:

[1378]*1378Section 112, ¶ 6 ... requires that the specification disclose a structure corresponding to the claimed means.

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Bluebook (online)
198 F.3d 1374, 53 U.S.P.Q. 2d (BNA) 1225, 1999 U.S. App. LEXIS 34441, Counsel Stack Legal Research, https://law.counselstack.com/opinion/atmel-corporation-v-information-storage-devices-inc-cafc-1999.