Alpha and Omega Semiconductor Limited, et al. v. Force MOS Technology Co., Ltd., et al.

District Court, N.D. California·Decided April 13, 2026·No. 5:22-cv-05448·Unknown

Opinion

ALPHA AND OMEGA Case No. 22-cv-05448-PCP SEMICONDUCTOR LIMITED, et al., Plaintiffs, ORDER RE: MOTIONS FOR SUMMARY JUDGMENT AND TO v. STRIKE FORCE MOS TECHNOLOGY CO., LTD., Re: Dkt. Nos. 149, 159, 172 et al., Defendants. This case involves a set of patents related to metal oxide semiconductor field effect transistors, or MOSFETs. Now before the Court are several motions. For the reasons stated herein, the Court grants plaintiff Alpha and Omega Semiconductor Ltd.’s (AOS) motion for a summary judgment that its accused products do not infringe U.S. Patent No. 7,646,058. The Court grants defendant Force MOS Technology Co., Ltd.’s motion for summary judgment as to AOS and third- party defendant Jireh Semiconductor, Inc.’s marking defenses under 35 U.S.C. § 287(a) and denies AOS’s motion for summary judgment as to that defense. The Court grants in part and denies in part Force MOS’s motion to exclude certain documents and theories that AOS allegedly failed to disclose during discovery and to strike expert testimony relying on those undisclosed materials.1 As described in greater detail in the Court’s claim construction order, see Dkt. No. 94 at 1– 3, MOSFETs are devices composed of differently doped semiconductor materials arranged to 1 The Court will resolve the parties’ Daubert motions (Dkt. Nos. 161, 163, and 165) and form junctions that, along with conductor and insulator materials, can be used to switch the direction of or amplify electrical signals. Power MOSFETs are designed to handle significant current and voltage and, like other transistors, have three electrical leads or terminals: a source, a drain, and a gate. Applying a voltage to the gate terminal controls the conductivity between the source and drain terminals. In a trench power MOSFET, current flows vertically from the source on the top layer of a silicon chip to the drain on the bottom, controlled by gates located in “trenches” within the chip. Force MOS is the owner of three patents pertaining to various inventions that aim to make power MOSFETs better, smaller, and cheaper. The first, U.S. Patent No. 7,629,634 (“’634 patent”), involves a trench MOSFET where the source contacts are trenched in addition to the gates and metal contact plugs extend into the source-contact trenches. The ’634 patent describes the use of particular contact layers at the side walls of those trenches to improve the performance of the chip. The second, U.S. Patent No. 7,847,346 (“’346 patent”), proposes a new source contact trench structure to allow for greater cell density and lower resistance, as well as lower fabrication costs. The third, U.S. Patent No. 7,646,058 (’058 patent”), seeks to improve the heat dissipation of trenched MOSFETs. This patent proposes a wider contact area between the front metal atop the chip and the wires that facilitate external connection, as well as using metals with better thermal conductivity than those used in the prior art. Specifically, claim 1 of the ’058 patent requires that “said metallic contact plugs and said front metal are composed of a metallic material having a thermal conductivity higher than a thermal conductivity of aluminum and/or aluminum alloys.” Force MOS and AOS both make trench MOSFETs, and Force MOS has sold MOSFETs embodying the asserted patents since 2017. In September 2022, Force MOS sent a letter to AOS asserting that AOS’s products infringe the ’634 patent. Soon thereafter, AOS filed this action seeking a declaratory judgment that its accused products do not infringe the ’634 patent. Force MOS sent another letter asserting infringement of the ’346 patent in November 2022, prompting AOS to amend its complaint to seek a declaration that its accused products also do not infringe that patent.2 Force MOS then sent a final letter in April 2023 notifying AOS of its alleged infringement of the ’058 patent. Force MOS subsequently filed counterclaims against AOS and a third-party complaint against AOS’s wholly-owned subsidiary Jireh, asserting claims for infringement of the ’646, ’346, and ’058 patents. AOS now moves for summary judgment on Force MOS’s claim for infringement of the ’058 patent and on AOS’s marking defense as to all of Force MOS’s claims. Force MOS moves for summary judgment as to both AOS and Jireh’s marking defenses. Force MOS also moves to strike or exclude certain evidence, information, and expert testimony reliant thereon pursuant to Federal Rule of Civil Procedure 37(c)(1). Courts may grant summary judgment “if the movant shows that there is no genuine dispute as to any material fact and the movant is entitled to judgment as a matter of law.” Fed. R. Civ. P. 56(a). A factual dispute is genuine “if the evidence is such that a reasonable jury could return a verdict for the nonmoving party.” Anderson v. Liberty Lobby, Inc., 477 U.S. 242, 248 (1986). A dispute is material if it “might affect the outcome of the suit under the governing law.” Id. The moving party bears the initial burden to demonstrate a lack of genuine factual dispute. Celotex v. Catrett, 477 U.S. 317, 323 (1986). “When the nonmoving party has the burden of proof at trial, the moving party need only point out ‘that there is an absence of evidence to support the nonmoving party’s case.” Devereaux v. Abbey, 263 F.3d 1070, 1076 (9th Cir. 2001) (quoting Celotex Corp., 477 U.S. at 325). The burden then shifts to the nonmoving party to “provide affidavits or other sources of evidence that ‘set forth specific facts showing that there is a genuine issue for trial.’” Id. at 1076 (quoting Fed. R. Civ. P. 56(e)). “The evidence of the non-movant is to be believed, and all justifiable inferences are to be drawn in his favor.” Anderson, 477 U.S. at 255. Federal Rule of Civil Procedure 37(c)(1) authorizes courts to strike or exclude evidence or information that “a party fails to provide … as required” in its initial disclosures and discovery responses, “unless the failure was substantially justified or is harmless.” This “self-executing, automatic sanction … provide[s] a strong inducement for disclosure of material” and does not “require[] … a finding of willfulness or bad faith to exclude … evidence.” Hoffman v. Constr. Protective Servs., Inc., 541 F.3d 1175, 1180 (9th Cir. 2008) (quoting Yeti by Molly, Ltd. v. Deckers Outdoor Corp., 259 F.3d 1101, 1106 (9th Cir. 2001)). The burden is on the party facing discovery sanctions under Rule 37(c)(1) to prove harmlessness or substantial justification. See Torres v. City of Los Angeles, 548 F.3d 1197, 1213 (9th Cir. 2008). A district court generally “has wide discretion in controlling discovery,” and “that discretion is particularly wide when it comes to excluding [evidence] under Rule 37(c)(1).” Ollier v. Sweetwater Union High Sch. Dist., 768 F.3d 843, 862 (9th Cir. 2014). I. AOS’s motion for a summary judgment as to the ’058 patent is granted. AOS first moves for summary judgment that its accused products do not infringe the ’058 patent. As noted above, the ’058 patent describes an invention relating to a trench MOSFET that contains both metallic contact plugs and a solderable front met

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Alpha and Omega Semiconductor Limited, et al. v. Force MOS Technology Co., Ltd., et al., (N.D. Cal. 2026).

Alpha and Omega Semiconductor Limited, et al. v. Force MOS Technology Co., Ltd., et al. (Alpha and Omega Semiconductor Limited, et al. v. Force MOS Technology Co., Ltd., et al.) — published by Counsel Stack Legal Research, free access to 12M+ legal documents.

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