Ultratech Stepper, Inc. v. ASM Lithography, Inc.

97 F. App'x 914
CourtCourt of Appeals for the Federal Circuit
DecidedMarch 30, 2004
DocketNo. 03-1405
StatusPublished

This text of 97 F. App'x 914 (Ultratech Stepper, Inc. v. ASM Lithography, Inc.) is published on Counsel Stack Legal Research, covering Court of Appeals for the Federal Circuit primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
Ultratech Stepper, Inc. v. ASM Lithography, Inc., 97 F. App'x 914 (Fed. Cir. 2004).

Opinion

DECISION

SCHALL, Circuit Judge.

Plaintiff-Appellant Ultratech Stepper, Inc. (“Ultratech”) appeals from the final decision of the United States District Court for the Northern District of California granting summary judgment of non-infringement in favor of Defendant-Appellee ASM Lithography, Inc. (“ASML”). Ultratech Stepper, Inc. v. ASM Lithography, Inc., No. C-00-4069-DLJ (N.D.Cal. Aug. 15, 2002) (“Summary Judgment Order”). Ultratech alleged in the district court that claims 1, 3, 8, 13, and 18-19 of its United States Patent No. 5,281,996, “Photolithographic Reduction Imaging of Extended Field,” (the “ ’996 patent”), were infringed by ASML’s imaging systems, produced abroad but imported for use by ASML’s customers in the United States. Because we do not agree with the district court’s claim construction, we reverse the grant of summary judgment and remand the case for further proceedings on the issue of infringement.

DISCUSSION

I.

The ’996 patent claims a variation on conventional photolithographic reduction imaging (“PRI”) processes. Such processes are used to manufacture semiconductor integrated circuits on silicon “wafers.” The ever-decreasing size of these circuits has challenged the industry to devise efficient methods by which circuit patterns can be transferred from a design “mask” (or “reticle”) to the silicon wafer.

In the traditional “step and repeat” PRI method, a light source, a mask, and a lens are used to transfer patterns from the mask onto the wafer in the following manner: The desired pattern for the integrated circuit is etched onto the much larger mask, typically made of high quality glass covered with a thin layer of chrome. The etching results in a pattern of opaque and transparent areas on the mask. The silicon wafer, in turn, is covered with a light sensitive photo-resist. Light passes through the transparent areas of the mask and reacts with the photo-resist to “expose” or “image” the desired pattern onto the wafer. Because the mask pattern can only feasibly be constructed on a much larger scale than that necessary for the final circuitry, a lens is used to significantly reduce the mask pattern before it is projected onto the wafer. The wafer can then be “stepped” relative to the mask, and the imaging process repeated to create multiple copies of the mask pattern on the wafer. The resulting photo-resist images serve as a starting point for the creation of detectable patterns (“layers” of circuitry) on the wafer. The process just described is repeated, with different mask patterns, over the same wafer area multiple times, forming numerous overlapping layers of circuit building blocks that eventually become a multi-layered circuit. The wafer upon which the multi-layered circuitry rests is then cut apart to form the final product, “dies” or “integrated circuit chips.”

Lens technology has limited the advance of PRI techniques, as the size of each projected image can never exceed the [916]*916maximum image field diameter of the lens being used. See ’996 patent, Fig. 2.1 Prior to the invention of the ’996 patent, the primary way of increasing the size of the mask pattern, and the resulting image projected onto the wafer, was to increase either the size or the reduction capability of the lens. Increases in lens size, however, are expensive and can compromise necessary detail in the PRI image transfer. Id. col. 3, II. 16-20. The industry thus sought to devise methods of increasing size without changing the dimensions of the lens.

The ’996 patent teaches one such method. Id. col. 1, II. 23-27. It employs a method of successively and incrementally moving the mask across the viewing field of a reduction lens, while exposing, during each increment, the surface of a wafer, which is moved in tandem with the mask.2 The ’996 patent describes this process as “imaging” the pattern on the mask, in reduced form, onto the wafer. Although the area exposed on the wafer during each increment is smaller than the image field diameter of the lens, the size of the combination of the exposures, the total image, should exceed that diameter. The result is to transfer the mask pattern onto the wafer in an imaged area that is larger than the image field of the lens. This method obviates the need for increased lens size, instead building on photolithography reduction apparatuses already widely available. Id. col. 4,1. 67 — col. 5,1. 1. The ’996 patent discloses two embodiments: an extended field image version, see id. Fig. 3, and a scanning version, see id. Fig. 4.

II.

On March 3, 2000, Ultratech brought this suit against ASML in the Eastern District of Virginia, alleging infringement of claims 1, 3, 8, 13, and 18-19 of the ’996 patent, both literally and under the doctrine of equivalents. Eventually, venue was transferred to the Northern District of California.

Claim 1 is representative of the claims at issue; it reads as follows:

We claim:

1. A method of imaging a large microcircuit device in a resolution range of 0.1-0.5 micrometers, said method comprising:
using an axially centered photolithographic reduction lens having a circular image field with a diameter that is less than a diagonal of said microcircuit device; arranging a stage for a mask for said microcircuit device to be movable relative to said lens; arranging a stage for a wafer on which said microcircuit device is imaged to be movable relative to said lens;
controlling the accuracy of movement of said stages relative to said lens; and
using said movement of said stages to correlate different regions of said mask moved into a field of view of said lens with correspondingly different regions of said wafer moved into said image field of said lens in a pattern that successively images the [917]*917entire area of said microcircuit device.

Id. eol. 6, I. 60 — col. 7, I. 11 (emphases added).

The critical term is “microcircuit device.” Before the district court, Ultratech argued that a “microcircuit device” consists of “one or more die made by superimposing one or more photolithographic patterns onto a wafer, where each photolithographic pattern corresponds to a single mask or reticle.” ASML, on the other hand, urged that “microcircuit device” be limited to an “integrated circuit,” and that it include only “circuits] formed from a single die whose components are formed on a single semiconductor having a diagonal longer than a diameter of the image field of the reduction lens.”

After considering the intrinsic evidence, the district court adopted a variant of ASML’s construction: “A microcircuit device is a single imaged layer on a single die. A large microcircuit device is a single imaged layer on a single die which has a diagonal longer than the diameter of the image field of the reduction lens.” Ultra-tech Stepper Inc. v. ASM Lithography, Inc., No. C-00-04069-DLJ (N.D.Cal. Dec. 20, 2001).

ASML’s accused method, allegedly identical to the scanning embodiment of the ’996 patent, exposes on the wafer a single, large image containing patterns for multiple circuits. Each of these circuits, in final form, is smaller than the image field of the reduction lens, although the combination of the circuits is larger than the image field.

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97 F. App'x 914, Counsel Stack Legal Research, https://law.counselstack.com/opinion/ultratech-stepper-inc-v-asm-lithography-inc-cafc-2004.