Semcon Tech, LLC v. Micron Technology, Inc.

660 F. App'x 908
CourtCourt of Appeals for the Federal Circuit
DecidedAugust 19, 2016
Docket2015-1936
StatusUnpublished
Cited by2 cases

This text of 660 F. App'x 908 (Semcon Tech, LLC v. Micron Technology, Inc.) is published on Counsel Stack Legal Research, covering Court of Appeals for the Federal Circuit primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
Semcon Tech, LLC v. Micron Technology, Inc., 660 F. App'x 908 (Fed. Cir. 2016).

Opinion

Bryson, Circuit Judge.

Plaintiff Semcon Tech, LLC, (“Semcon”) appeals from a summary judgment entered in favor of defendant Micron Technology, Inc., (“Micron”) by the United States District Court for the District of Delaware. The district court held that the asserted claims of U.S. Patent No. 7,156,-717 (“the ’717 patent”) are invalid as anticipated by U.S. Patent No. 6,010,538 (“Sun”). Because we disagree with the analysis that led the district court to conclude that there is no genuine issue of material fact on the issue of anticipation, we vacate the district court’s summary judgment order and remand for further proceedings.

I

The ’717 patent is directed to methods for finishing semiconductor wafers during manufacture. The methods of the four asserted claims entail carefully reducing the thickness of the wafers by a computer-controlled polishing process that uses pressure and a chemical slurry. The finishing process employs sensors to monitor and adjust the reduction of the thickness of the wafers. When the process reaches a predefined endpoint it stops.

It is undisputed that Sun is a close prior art reference. Like the ’717 patent, the Sun patent describes controlling the finishing of a semiconductor wafer using calculations derived from sensor data. The anticipation dispute focuses on only one limitation of the ’717 patent: “changing a plurality of control parameters in response *910 to an evaluation of both the in situ process information ... and the tracked information ... during at least a portion of the finishing cycle time.” 1

The narrow issue on appeal is whether the district court erred in concluding, on summary judgment, that Sun discloses this limitation of changing the control parameters for the finishing process by using calculations that are based on both “tracked information” and “in situ process information,” and that no reasonable finder of fact could conclude otherwise. The district court construed tracked information to mean “pre-polishing information about the wafer being polished that is associated with the wafer,” and found that the initial thickness of the wafer was an example of tracked information. The court construed in situ process information to mean “information that is sensed from the wafer currently undergoing CMP [chemical-mechanical polishing].” Those constructions are no.t disputed.

The district court found that Sun disclosed this limitation and based its analysis on statements by Micron’s expert, Dr. David Dornfeld. In particular, the court quoted the statement by Dr. Dornfeld in his principal declaration that “Sun discloses that the polishing process can be controlled in real time in response to pre-polish thickness information and information that is sensed from the wafers by sensors before reaching its endpoint.” The court also relied on Dr. Dornfeld’s statement in Micron’s claim chart that “Sun discloses a controller and processor algorithm which, in response to rate information calculated from the initial thickness of the wafer being polished and information detected from sensors, can control the CMP process.” Based on that evidence, the court concluded that Sun disclosed the use of tracked information, i,e., the initial thickness of the wafer, in connection with in situ process information obtained from the sensors, to calculate rate of removal information that is used to change the control parameters during the finishing process. The court thus adopted Dr. Dornfeld’s conclusion that Sun uses the initial thickness of the wafer to calculate the amount of material removed from the wafer during polishing and thus to calculate the rate of removal of the material from the wafer. The rate of removal, Dr. Dornfeld explained, was used to affect the control parameters for the polishing process.

Semcon contends that the district court erred in its finding as to what Sun discloses. According to Semcon, Sun calculates the rate of material removal from the wafer without reference to tracked information (e.g., the wafer’s initial thickness). Instead, Semcon asserts, Sun calculates the rate of removal based exclusively on sensor readings gathered during the polishing process and timing information. As evidence for its interpretation of Sun, Semcon cites portions of the Sun patent and Dr. Dornfeld’s deposition testimony, which purportedly contradicts his declaration. Reviewing that evidence, the district court concluded that Semcon “offers no contrary expert testimony, but instead provides snippets of deposition examination. The snippets do not create a disputed material fact.”

In this appeal we examine whether there is a genuine question that Sun discloses the use of the initial thickness of the wafer in calculating the rate of removal of material from the wafer.

*911 II

Summary judgment is appropriate “if the movant shows that there is no genuine dispute as to any material fact and the movant is entitled to judgment as a matter of law.” Fed. R. Civ. P. 56(a). There is a genuine dispute of material fact “if the evidence is sufficient for a reasonable fact-finder to return a verdict for the nonmov-ing party.” Anderson v. Liberty Lobby, Inc., 477 U.S. 242, 248, 106 S.Ct. 2505, 91 L.Ed.2d 202 (1986).

A

The district court relied heavily on Dr. Dornfeld’s declaration and his attached claim chart. In particular, the court noted that Dr. Dornfeld referred to column 8, lines 41-67, and Figure 13 from Sun as the basis for his conclusion that Sun discloses using the initial thickness of the wafer in calculating the rate of removal of material from the wafer during the polishing process. In fact, however, the cited portions of Sun do not appear to support Dr. Dorn-feld’s characterization.

Earlier portions of column 8 of Sun describe how the initial thickness of the wafer can be used to determine the endpoint of the polishing process based on the wafer’s current thickness. Sun first explains' that “[a]t some point TE, the thickness of the layer has been reduced by a desired amount; that is, an endpoint to the CMP process. This is often all the information that is necessary to control the process and determine its endpoint.” 2 Sun, col. 8, ll. 13-20. Sun then adds that “[b]y also knowing the starting thickness of the transparent layer, the measured thickness removed is subtracted to determine the remaining thickness of the layer. It is often desired to determine, as an endpoint of the process, when the layer has been reduced to a certain thickness. The CMP process is then stopped.” Id., col. 8, ll. 20-25.

Those portions of column 8 of Sun disclose using the wafer’s initial thickness to determine the endpoint of the CMP process based on a target remaining thickness, but they do not address the question whether the wafer’s initial thickness is used to calculate the rate of removal that is in turn used to control the process before the endpoint is reached.

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Cite This Page — Counsel Stack

Bluebook (online)
660 F. App'x 908, Counsel Stack Legal Research, https://law.counselstack.com/opinion/semcon-tech-llc-v-micron-technology-inc-cafc-2016.