Rockwell International Corp. v. SDL, Inc.

103 F. Supp. 2d 1192, 2000 U.S. Dist. LEXIS 9305, 2000 WL 897799
CourtDistrict Court, N.D. California
DecidedJune 29, 2000
DocketC95-1729 MHP
StatusPublished
Cited by4 cases

This text of 103 F. Supp. 2d 1192 (Rockwell International Corp. v. SDL, Inc.) is published on Counsel Stack Legal Research, covering District Court, N.D. California primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
Rockwell International Corp. v. SDL, Inc., 103 F. Supp. 2d 1192, 2000 U.S. Dist. LEXIS 9305, 2000 WL 897799 (N.D. Cal. 2000).

Opinion

MEMORANDUM AND ORDER

PATEL, Chief Judge.

On May 22, 1995, Plaintiffs Rockwell International Corporation and Rockwell Science Center (“Rockwell”) filed this action against SDL, Inc. (“SDL”) alleging infringement of United States Patent Number 4,368,098 (“the ’098 patent”). This court subsequently stayed further proceedings pending the outcome of an action before the United States Court of Federal Claims in which Rockwell sued the United States for infringement of the ’098 patent. SDL intervened as a party defendant in that dispute shortly after Rockwell initiated the present infringement action. This action was reopened on January 13, 1999. SDL now moves for partial summary judgment based on the equitable doctrine of laches, alleging that Rockwell unreasonably delayed filing this action and thereby caused SDL material prejudice. A hearing on this motion was held on June 19, 2000. Having considered the parties’ arguments and submissions, and for the reasons set forth below, the court hereby enters the following memorandum and order.

BACKGROUND

I. The ’098 Patent and MOCVD Process

Plaintiff Rockwell’s ’098 patent was developed by Dr. Harold Manesevit, who filed a patent application on February 13, 1968. The United States Department of Commerce, Patent Office, first rejected the application. Manesevit then responded and engaged the Patent Office in a series of correspondence. The Patent Office ultimately approved the application and issued the ’098 patent on January 11,1983.

The ’098 patent relates to a process known as metal organic chemical vapor deposition (“MOCVD”). In general, this process causes gaseous reactants containing certain atomic elements from Groups III and IV of the periodic table to break down, deposit on a single crystal substrate, and form a single crystal or “epitaxial” film of semiconductor material. In particular, the ’098 patent claims a special MOCVD process that achieves the epitaxial film deposit in a “cold-wall” reactor. The cold-wall reactor has been defined as one in which the substrate site is heated while the exterior walls remain significantly cooler. 1

SDL was formed in March 1983. SDL uses an MOCVD process to manufacture high-power laser diodes. SDL began marketing its laser diode products in 1984. *1194 Many of SDL’s product data sheets advertise that it uses a “state-of-the art,” “[advanced,” or “highly efficient” MOCVD technology to produce its devices. See Evans Dec., Exhs. A-N. A “representative” SDL advertisement employs similar language, describing SDL’s MOCVD process as an “[advanced MOCVD growth technique[ ].” Evans Dec. ¶ 15 & Exh. AA. The advertisements and data sheets also describe the technical specifications of some of SDL’s products. See id. Exhs. A-N; Exh. AA. SDL used these materials to market its products from June 1984 through May 1990. See Evans Dec. ¶ 4.'

During the same time period, SDL distributed product catalogues via trade shows, trade publications and other interested parties. See Evans Dec., Exhs. 0-U. Like the data sheets and advertisements, these catalogues describe generally the benefits of using MOCVD technology to manufacture SDL’s devices: “MOCVD processing permits very close control of material composition, layer interfaces, and device geometry. MOCVD also allows fabrication of multiple quantum wells in the diode active layer, increasing electrical to optical efficiency and lowering threshold current requirements.” Evans Dec., Exh. 0 at 2; see also Evans Dec., Exhs. P at 1; R at 2, 8; S at 2 (using the same or very similar language to describe the MOCVD process).

In 1985, 1986, November 1988 and July 1989, SDL also made available “technical notes” to interested parties. These publications describe the MOCVD process in more detail than the advertisements or product manuals. They identify certain chemical compounds used in the process, state that the compounds are combined on a heated substrate, and include a simple MOCVD reactor schema. See Evans Dec., Exhs. V at 1; W at 5-6; X at 9.

The first communication on record between Rockwell and SDL is a January 7, 1985 letter in which Rockwell stated that its “attention” had been called to SDL’s advertised use of MOCVD technology. 2 Scifres Dec., Exh. A. In that letter, Rockwell enclosed a copy of its ’098 patent and informed SDL that licenses were available on reasonable terms. See id. SDL’s patent counsel responded by letter of March 25, 1986, concluding it needed no license because SDL practiced a different technology and because SDL doubted the validity of the ’098 patent. See Scifres Dec., Exh. B. On July 23, 1989, Rockwell rejected SDL’s assertion that the ’098 patent was invalid and requested clarification as to the bases of SDL’s conclusion that it did not need a license. Rockwell also renewed its offer to negotiate a license, stating it believed the ’098 patent covered a basic MOCVD process that would interest anyone using such technology. See Scifres Dec., Exh. C. SDL then replied by letter of October 1987 clearly stating SDL does not infringe the ’098 patent. SDL’s patent counsel distinguished Rockwell’s patent, explaining SDL employed a hot-wall process whereas Rockwell used a cold-wall process: “Our processes are not of the cold wall type and do not read on the ’098 claims.” Scifres Dec., Exh. E at 1, 2. SDL further disputed the validity of the patent and again concluded a license was unnecessary. See id.

Later, by letter of January 28, 1990, Rockwell rebutted SDL’s validity assessment and apprised SDL of its extended licensing program. Rockwell suggested a meeting because it thought SDL’s characterization of its hot-wall process insuffi *1195 ciently detailed to determine whether it infringed the ’098 patent. Rockwell stated that SDL’s activities “may very well meet the patent claims” but concluded it was not “ineluctably clear” whether SDL’s process did meet those claims. Scifres Dec., Exh. E at 2. Rockwell cited a June 1984 advertisement and a 1981 presentation by one of SDL’s founding corporations to support its statements. See id.

From July 1990 through February 1994, the two companies exchanged correspondence similar to them previous communications. Rockwell consistently requested more detail about SDL’s MOCVD process and SDL consistently reiterated its belief that its process did not read on the ’098 claim. See Scifres Dec., Exhs. F-L.

By 1988 Rockwell began to license companies utilizing the technology claimed by the ’098 patent; it continued this campaign through 1993. See Pernick Dec., Exh. G; Davey Dec. ¶¶ 3-6.

Rockwell subsequently filed this action.

II. History of the Laches Defense

After Rockwell filed this action in 1995, SDL asserted the laches defense in its answer. SDL then intervened in Rockwell’s action against the United States as a party defendant pursuant to Rule 24(b) of the Rules of the Court of Federal Claims.

Free access — add to your briefcase to read the full text and ask questions with AI

Related

Lautzenhiser Technologies, LLC v. Sunrise Medical HHG, Inc.
752 F. Supp. 2d 988 (S.D. Indiana, 2010)
Crown Packaging Technology, Inc. v. Rexam Beverage Can Co.
498 F. Supp. 2d 718 (D. Delaware, 2007)
PSN Illinois, Inc. v. Ivoclar Vivadent, Inc.
398 F. Supp. 2d 902 (N.D. Illinois, 2005)

Cite This Page — Counsel Stack

Bluebook (online)
103 F. Supp. 2d 1192, 2000 U.S. Dist. LEXIS 9305, 2000 WL 897799, Counsel Stack Legal Research, https://law.counselstack.com/opinion/rockwell-international-corp-v-sdl-inc-cand-2000.