International Rectifier Corporation, Plaintiff-Cross v. Ixys Corporation

361 F.3d 1363, 2004 WL 528425
CourtCourt of Appeals for the Federal Circuit
DecidedApril 29, 2004
Docket02-1414, 02-1554
StatusPublished
Cited by54 cases

This text of 361 F.3d 1363 (International Rectifier Corporation, Plaintiff-Cross v. Ixys Corporation) is published on Counsel Stack Legal Research, covering Court of Appeals for the Federal Circuit primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
International Rectifier Corporation, Plaintiff-Cross v. Ixys Corporation, 361 F.3d 1363, 2004 WL 528425 (Fed. Cir. 2004).

Opinion

LINN, Circuit Judge.

IXYS Corporation (“IXYS”) appeals from a final judgment of the United States District Court for the Central District of California concluding, pursuant to a series of stipulations and motions for summary adjudication, that IXYS infringed various claims of U.S. Patents Nos. 4,959,699 (“the '699 patent”), 5,008,725 (“the '725 patent”), and 5,130,767 (“the '767 patent”), owned by International Rectifier Corporation (“IR”). 1 Int’l Rectifier Corp. v. IXYS Corp., No. CV-00-6756-R (C.D.Cal. July 1, 2002) (“Final Judgment”). IXYS also appeals from orders of the district court granting IR’s motion for summary adjudication of IXYS’s affirmative defenses of estoppel and laches, Int’l Rectifier Corp. v. IXYS Corp., No. CV-00-6756-R (C.D.Cal. Apr. 1, 2002) (“Equitable Defenses Order”), and derivation and inequitable conduct, Int’l Rectifier Corp. v. IXYS Corp., No. CV-00-6756-R (C.D.Cal. Dec. 17, 2001) (“Derivation Order”). Finally, IXYS requests that, if remand is necessary, this case be reassigned to a different district court judge.

Because IXYS’s allegations of derivation and inequitable conduct, even if taken as uncontroverted, are insufficient as a matter of law, we affirm the district court’s *1366 Derivation Order. However, because the district court’s Equitable Defenses Order was based solely on IXYS’s invocation of privilege, and because IXYS has set forth other, non-privileged evidence in support of the defenses of laches and estoppel, we vacate the order and remand to the district court for consideration of IXYS’s defenses in light of the non-privileged evidence. Because we hold that the district court’s construction of the term “adjoining” as used in claims 19, 22, 24, and 27 of the '699 patent was erroneous, and because no reasonable jury could find those claims infringed based on the facts stipulated to by the parties, we reverse the district court’s denial of IXYS’s motion for summary júdgment of non-infringement of claims 19, 22, 24, and 27 of the '699 patent and reverse-in-part the district court’s Final Judgment with respect to those claims. Because the district court also erred in construing the claim terms “polygonal” and “annular,” and because genuine issues of material fact remain with respect to the asserted claims containing those terms, we vacate-in-part the portion of the district court’s Final Judgment relating thereto and remand the case to the original district court judge for further proceedings consistent with this opinion.

BACKGROUND

The patents-in-suit relate to vertical planar power metal-oxide-semiconductor (VPPM) transistor devices, such as metal-oxide-semiconductor field effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). These devices are used to switch line-level electric voltages on and off at high speeds. Like other semiconductor devices, the transistors at issue here are manufactured, in part, by implanting a pattern of impurities (such as boron) into the surface of a silicon semiconductor wafer. The impurities are introduced through a window in an “implant mask,” used to define the pattern of the implant on the surface of the silicon. After implantation, the wafer is heated at a high temperature to cause the impurities to diffuse in three dimensions outwards from the surface and into the wafer. The shape of each region of the resulting transistor is determined by the shape of the mask, the temperature and duration of the diffusion heating, and the concentration of the impurities used.

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The written descriptions and drawings of the '725 and '767 patents are identical, Figure 3 of the patents is reproduced above to illustrate the discussion that follows. “By using suitable masks, a plurali *1367 ty of P type base regions such as regions 22 and 23 in [Figure 3] are formed in one surface of the semiconductor wafer region 21, where these regions are generally polygonal in configuration and, preferably, are hexagonal.” '725 patent, col. 2,1. 65— col. 3,1. 2. Each of the “polygonal” regions, such as base regions 22 and 23, are surrounded by “polygonal ring” source regions 26 and 27, respectively. Id., col. 3,11. 20-22.

The claims at issue in this appeal pertain to these regions and their shapes. Claims 1 and 19 of the '699 patent are representative. Claim 1 recites, in relevant part and with the disputed terms underlined:

1. A high power metal oxide silicon field effect transistor device exhibiting relatively low on-resistance and relatively high breakdown voltage; said device comprising:
a wafer of semiconductor material having first and second opposing semiconductor surfaces; said wafer of semiconductor material having a relatively lightly doped major body portion for receiving junctions and being doped with impurities of one conductivity type;
at least first and second spaced base regions of the opposite conductivity type to said one conductivity type ...
first and second source regions of said one conductivity type ...
at least said first base region being a cellular polygonal region; said cellular polygonal region being surrounded by said common conduction region; said first source region having the shape of an annular ring disposed within said cellular polygonal first base region.

’699 patent, Reexamination Certificate Issued Under 35 U.S.C. § 307, B2 4,959,699, col. 1,1. 25 — col. 2,1. 5.

Claim 19 of the '699 patent recites, with the disputed term underlined:

19. A high power metal oxide silicon field effect transistor device exhibiting relatively low on-resistance; said device comprising:
a wafer of semiconductor material having first and second opposing semiconductor surfaces; said wafer of semiconductor material having a relatively lightly doped major body portion for receiving junctions and being doped with impurities of one conductivity type;
at least first and second spaced base regions of the opposite conductivity type to said one conductivity type formed in said wafer ...
said wafer including a further region of opposite conductivity type adjoining said lightly doped major body portion; and
an electrode coupled to said further region.

Id., col. 3,1.6 — col. 4,1. 9.

The technology of these power transistors traces its origins to work done in the late 1970s. In 1975, Hewlett-Packard (“HP”) began a new research initiative to develop a semiconductor chip that was capable of fast switching and of withstanding a power surge of 450 volts, about double the wall voltages ordinarily found in Europe and well in excess of the lower voltages found in the United States. This research resulted in the first VPPM device prototype chip. To optimize the prototype chip for commercial production, Dr.

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Bluebook (online)
361 F.3d 1363, 2004 WL 528425, Counsel Stack Legal Research, https://law.counselstack.com/opinion/international-rectifier-corporation-plaintiff-cross-v-ixys-corporation-cafc-2004.