Applied Material, Inc. v. TOKYO SEIMITSU, CO.

446 F. Supp. 2d 525, 2006 U.S. Dist. LEXIS 81702, 2006 WL 2376222
CourtDistrict Court, E.D. Virginia
DecidedAugust 11, 2006
DocketCivil Action 2:05cv476
StatusPublished

This text of 446 F. Supp. 2d 525 (Applied Material, Inc. v. TOKYO SEIMITSU, CO.) is published on Counsel Stack Legal Research, covering District Court, E.D. Virginia primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
Applied Material, Inc. v. TOKYO SEIMITSU, CO., 446 F. Supp. 2d 525, 2006 U.S. Dist. LEXIS 81702, 2006 WL 2376222 (E.D. Va. 2006).

Opinion

MEMORANDUM OPINION AND ORDER (iCLAIM CONSTRUCTION)

JACKSON, District Judge.

Applied Materials (“Plaintiff’) filed a complaint against Tokyo Seimitsu, Co. and Accretech USA (“Defendants”) alleging patent infringement of their United States Patent 6,876,454 (“ '454 Patent”) entitled “Apparatus and Method for In-Situ Endpoint Detection for Chemical Mechanical Polishing.” The matter before the Court is the claim construction of the terms “light,” “window” and “detector” found in the '454 Patent. The Court conducted a Markman hearing on July 17, 2006. For the reasons outlined below, the Court FINDS that the term “light” as defined in the '454 Patent is the spectrum of electromagnetic radiation which can be seen by the human eye and is not limited to lasers. The Court also FINDS that the proper construction of “window disposed adjacent to the hole” in the '454 Patent encompasses windows that are both in and near the hole. Finally, the Court FINDS that the term “detector” in the '454 Patent refers to a device for detecting the presence of electromagnetic waves and is not confined to the detection component of a laser interferometer.

I. BACKGROUND

This case involves technology for chemical mechanical polishing of silicon wafers used in the manufacture of semiconductor integrated chips. Semiconductor integrated chips are manufactured by depositing multiple layers of conductive material onto a silicon wafer. The silicon wafers are typically circular and will have up to several hundred layers of semiconductor integrated chips on each wafer. The process by which the layers are deposited onto the wafer leaves an irregular surface on the top, causing a need for the wafer to be polished or “planarized” to smooth out the surface for the next layer. Chemical mechanical planarization (“CMP”) is a technology which achieves this necessary polishing.

In a typical CMP machine, wafers are held upside down by a polishing head and rotated against a polishing pad that is placed on the platen rotating in the opposite direction. The polishing pad is treated with a chemical “slurry” which results in the removal of material from the wafer to produce a smooth surface onto which the next layer of the wafer can be deposited. It is important to determine the proper point at which the desired planarity and thickness of the layer has been reached, referred to as optical endpoint detection (“OEPD”).

The '454 Patent was issued to Plaintiff on April 5, 2005. 1 The '454 Patent describes an apparatus and method for in situ endpoint detection in the CMP processes, in which a light beam from a sta *528 tionary light source located below the platen is directed through a hole or window in the platen and polishing pad to the surface of the wafer. The light that is reflected back from the wafer is then observed and analyzed by a stationary detector to determine the appropriate endpoint. The '454 Patent includes seventy-six (76) claims. Claims 1, 9, and 22 and their respective dependent claims are disputed in this case. Claim 1 reads:

An apparatus for chemical polishing (CMP) of a wafer, comprising:
(a) a rotatable polishing platen to support a polishing pad, the platen having a hole formed therethrough and rotat-ably mounted to a chassis;
(b) a polishing head for holding the wafer against the polishing pad and,
(c) an endpoint detector, comprising, (cl) a stationary light source capable of generating a light beam directed towards the wafer from a side of the wafer contacting the polishing pad, (c2)a window disposed adjacent to the hole formed through the platen, the window rotating with the platen and intermittently providing a pathway for the light beam to impinge on the wafer during at least a part of the period of time when the wafer overlies the window, and
(c3) a stationary detector to receive light from the light beam reflected by the wafer through the window.

Claim 9 is directed to a method of CMP processing. Claim 9 states:

A method for chemical mechanical polishing (CMP) of a wafer, the method comprising the steps of:
(a) holding the wafer in a polishing head against a polishing pad;
(b) moving the polishing pad to polish the wafer;
(c)determining an endpoint whereat polishing is terminated, the determining step compromising the steps of,
(cl) generating a stationary light beam directed towards the wafer from a side of the wafer contacting the polishing pad;
(c2) intermittently passing the light beam through a window that moves with the polishing pad, the window intermittently providing a pathway for the light beam to impinge on the wafer during at least a part of a period of time when the wafer overlies the window, and,
(c3) detecting light of the light beam reflected from the wafer through the window to a stationary detector.

Claim 22 defines the device used for CMP processing as envisioned by the patentee:

An apparatus for chemical mechanical polishing (CMP) of a wafer, comprising:
(a) a polishing pad support to hold a polishing pad and cause the polishing pad to move relative to the wafer;
(b) a polishing head for holding the wafer against the polishing pad; and
(c) an optical monitoring system, comprising,
(cl) a stationary hght source to direct a hght beam toward the wafer from a side of the wafer contacting the polishing pad,
(c2) a window that moves with the polishing pad, the window intermittently providing a pathway for the hght beam to impinge on the wafer during at least a part of a period of time when the wafer overlies the window,
(c3) a stationary detector to receive reflections of the hght beam from the wafer through the window.

*529 II. LEGAL STANDARDS

Claim construction is “a question of law, to be determined by the court.” Markman v. Westview Instruments, Inc., 517 U.S. 370, 384, 116 S.Ct. 1384, 134 L.Ed.2d 577 (1996). “When construing patent claims, the Court must look first to the intrinsic evidence in the record: ‘The claims, the specification, and the prosecution history.’ ” Markman v. Westview Instruments, Inc. 52 F.3d 967, 979 (Fed.Cir.1995) (en banc). The claims, specifications, and prosecution history constitute the public record of the claim.

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446 F. Supp. 2d 525, 2006 U.S. Dist. LEXIS 81702, 2006 WL 2376222, Counsel Stack Legal Research, https://law.counselstack.com/opinion/applied-material-inc-v-tokyo-seimitsu-co-vaed-2006.