The Fox Group, Inc. v. Cree, Inc.

700 F.3d 1300, 105 U.S.P.Q. 2d (BNA) 1097, 2012 U.S. App. LEXIS 24614, 2012 WL 5935680
Court of Appeals for the Federal Circuit·Decided November 28, 2012·No. 2011-1576·Published·Cited by 28 cases

Opinions

Opinion for the court filed by Circuit Judge WALLACH.

Opinion concurring-in-part, dissenting-in-part filed by Circuit Judge O’MALLEY.

WALLACH, Circuit Judge.

The Fox Group, Inc. (“Fox”) appeals from the decision of the United States District Court for the Eastern District of Virginia granting Cree, Inc.’s (“Cree”) motion for summary judgment of invalidity of U.S. Patent No. 6,562,130 (filed May 4, 2001) (“the '130 patent”). Fox Group, Inc. v. Cree, Inc., 819 F.Supp.2d 524, 537 (E.D.Va.2011). We find that the district court did not err in granting summary judgment in Cree’s favor based upon the invalidity of claims 1 and 19 of the '130 patent under 35 U.S.C. § 102(g). However, because there was no case or controversy at the time of the judgment over the remaining claims of the '130 patent (“unasserted claims”), the district court erred in holding the unasserted claims of the '130 [1302]*1302patent invalid. Accordingly, we affirm-in-part and vacate-in-part.

Background

Fox is the assignee of the '130 patent, entitled Low Defect Axially Grown Single Crystal Silicon Carbide, which claims a low defect silicon carbide (“SiC”) crystal and relates to a method and apparatus of said crystal. '130 patent col. 3 ll. 15-27. The '130 patent claims priority from application No. PCT/RU97/00005, filed on January 22, 1997. Id. at col. 1 ll. 6-10. “SiC crystal is a semiconductor material grown via man-made methods and used in high-temperature and high-power electronics such as light sources, power diodes, and photodiodes. To be viable as a semiconductor, SiC material must contain a relatively low level of defects.” Fox Group, 819 F.Supp.2d at 526-27.

Fox argues that Cree infringes claims 1 and 19 of the '130 patent. Claim 1 recites:

A silicon carbide material comprising an axial region of re-crystallized single crystal silicon carbide with a density of dislocations of less than 104 per square centimeter, a density of micropipes of less than 10 per square centimeter, and a density of secondary phase inclusions of less than 10 per cubic centimeter.

'130 patent col. 8 ll. 6-11. Claim 19 is very similar, but requires a seed crystal and requires a region of axially recrystallized silicon carbide initiated at the growth surface of the seed crystal. Id. at col. 9 1. 37-col. 10 1. 6. Claim 19 states:

A silicon carbide material, comprising:
a single crystal silicon carbide seed crystal, said single crystal silicon carbide seed crystal having a growth surface; and
a region of axially re-crystallized silicon carbide, said region of axially re-crystallized silicon carbide initiating at said growth surface of said single crystal silicon carbide seed crystal, said region of axially re-crystallized silicon carbide having a density of dislocations of less than 104 per square centimeter, a density of micropipes of less than 10 per square centimeter, and a density of secondary phase inclusions of less than 10 per cubic centimeter.

Id.

Cree has engaged in research to grow low defect SiC crystals since its founding in 1987. In February 1995, as part of its research program, Cree grew boule G0259 and sent Dr. Michael Dudley, of the State University of New York at Stony Brook, a wafer sliced from that boule, wafer G02593 (the “Kyoto Wafer”), for X-ray topography analysis. After the initial analysis, Cree asked Dr. Dudley to do more analysis “to see if there are more lc dislocations in areas with no micropipes than in areas with micropipes.” JA2121. Dr. Dudley advised Cree that there was an exceptionally low defect area in the Kyoto Wafer.

At the 1995 International Conference on SiC and Related Materials (the “Kyoto Presentation”). Dr. Calvin Carter, one of the Cree inventors, showed a cropped image and described the low defect nature of the Kyoto Wafer, stating that it had an area with less than 1,000 dislocations per square centimeter, and no micropipes. In an article published in 1996 (“1996 Article”), entitled “Recent progress in SiC crystal growth,” Cree described the Kyoto Wafer. JA2129. The 1996 Article disclosed that Cree had “recently had a breakthrough that ... dramatically reduced” micropipe density. JA2127. The article included an image of the X-ray topograph generated during Dr. Dudley’s analysis, showing the high quality SiC that Cree had grown. The caption explained that the image was of a “14 x 4.5 mm area [1303]*1303of a 4H-SÍC wafer. Excluding the portions with dislocation tangles, this area has a total line defect density of about 1000 cm'2.” Id.

In 2007, Dr. Dudley analyzed a wafer from Cree at Fox’s request. In April 2011, Dr. Dudley reviewed the 1995 X-ray topographs of the Kyoto Wafer and determined that a region of the wafer had an average dislocation density of less than 104 per square centimeters, no micropipes, and no secondary phase inclusion.

Fox originally brought suit against Cree on June 29, 2010.1 In its Complaint, Fox sought injunctive relief as well as compensatory damages against Cree for infringing the '130 patent and U.S. Patent No. 6,534,-026 (“the '026 patent”).2 In its Answer, Cree filed counterclaims seeking declarations that the '026 and '130 patents are not infringed, invalid, and unenforceable. Cree filed a motion for summary judgment of invalidity on April 11, 2011.

On June 10, 2011, the court issued its claim construction opinion construing terms in both the '130 patent and the '026 patent. On July 20, 2011, in response to a motion from Fox, the district court entered a judgment of noninfringement of the '026 patent for Cree and dismissed Cree’s counterclaims related to the '026 patent. The court then denied Cree’s motion for summary judgment of noninfringement of the '026 patent as moot and considered only whether there was any genuine issue of material fact concerning the validity and infringement of the '130 patent.

On August 8, 2011, the district court granted Cree’s motion for summary judgment on its counterclaim seeking a declaration that the '130 patent is invalid, and dismissed or denied the other claims and counterclaims on infringement and unenforceability as moot. Id. at 537. Fox timely appealed. We have jurisdiction pursuant to 28 U.S.C. § 1295(a)(1).

Discussion

Fox’s challenge to the district court’s grant of summary judgment of invalidity is premised on the notion that Cree is not a prior inventor of the low defect wafer claimed by Fox, or, if it was, that Cree abandoned, suppressed, or concealed the invention. Fox also argues that the district court erred in entering an order invalidating the entire '130 patent, when only claims 1 and 19 were asserted. We address each in turn.

“This court reviews the district court’s grant or denial of summary judgment under the law of the regional circuit.” Lexion Med., LLC v. Northgate Techs., Inc., 641 F.3d 1352, 1358 (Fed.Cir.2011). The Fourth Circuit reviews the grant of summary judgment de novo. Nader v.

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The Fox Group, Inc. v. Cree, Inc., 700 F.3d 1300, 105 U.S.P.Q. 2d (BNA) 1097, 2012 U.S. App. LEXIS 24614, 2012 WL 5935680 (Fed. Cir. 2012).

700 F.3d 1300 (The Fox Group, Inc. v. Cree, Inc.) — published by Counsel Stack Legal Research, free access to 12M+ legal documents.

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