Silicon Storage Technology, Inc. v. Xicor LLC

776 F. Supp. 2d 1072, 2011 U.S. Dist. LEXIS 30245, 2011 WL 1045235
CourtDistrict Court, N.D. California
DecidedMarch 22, 2011
DocketC 10-1515 MHP
StatusPublished
Cited by1 cases

This text of 776 F. Supp. 2d 1072 (Silicon Storage Technology, Inc. v. Xicor LLC) is published on Counsel Stack Legal Research, covering District Court, N.D. California primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
Silicon Storage Technology, Inc. v. Xicor LLC, 776 F. Supp. 2d 1072, 2011 U.S. Dist. LEXIS 30245, 2011 WL 1045235 (N.D. Cal. 2011).

Opinion

MEMORANDUM & ORDER

MARILYN HALL PATEL, District Judge.

Plaintiff Silicon Storage Technology, Inc. (“SST”) brought this action against defendant Xicor LLC, seeking a declaration that claims 12 and 13 of U.S. Patent No. RE38,370 (“the '370 patent”) are invalid and that it has not infringed Xicor’s patent. Xicor filed a counterclaim alleging infringement of the '370 patent. Now before the court are the parties’ cross-motions for summary judgment as to whether claims 12 and 13 of the '370 patent are invalid under the rule against recapture. Having considered the parties’ arguments and submissions, and for the reasons set forth below, the court enters the following order.

BACKGROUND

I. Technology Addressed by the PatenLin-Suit

The patent at issue relates to the “tunneling oxide layer” of a computer memory chip and a method for forming that region. See Docket No. 50 (Evans Decl.) Exh. C ('370 patent) at 1:12-16. Electrically erasable read-only memory devices (“EEP-ROM”) contain “floating gates” which store electric charge and indicate the presence or absence of such charge with a binary 1 or O. Id. at 1:19-22. The floating gate is electrically insulated from the other electrodes of the EEPROM device by one or more layers of a “tunneling” oxide, which under certain conditions allow electrons to “tunnel” through to the floating gate Id. at 1:25-31. The tunneling oxide can only conduct a limited amount of charge before it breaks down. The life of a tunneling oxide can be further limited by the presence of structural defects and by the high levels of stress that develop in the tunneling oxide during the production of the tunneling layer. Id. at 1:31-53. The '370 patent attempts to increase the reliable, useful life cycle of a EEPROM device by producing a tunneling oxide layer that lacks the defects and high levels of stress present in the prior art. Id. at 2:15-31. The patent discloses a method and means of depositing a tunneling oxide using a low *1075 pressure, low temperature chemical vapor deposition (“LPCVD”) process. Id. at 1:59-62. The patent identifies tetraethylorthosilicate (“TEOS”) as the preferred chemical for the LPCVD process. Id. at 1:63-64.

Independent claim 1 of the '370 patent recites, in pertinent part:

An improved tunneling region for use with an integrated circuit comprising:

a first layer of polysilicon; a first electron tunneling layer of thermal oxide formed over said first layer of polysilicon;
a second electron tunneling layer of annealed deposited silicon dioxide formed over said first tunneling layer having a thickness less than 2000 Angstroms thick, said silicon dioxide layer being formed by low pressure chemical vapor deposition comprising the use of tetraethylorthosilicate; and
a second layer of polysilieon formed over said layer of deposited silicon dioxide

Id. at 5:4-22 (emphasis added). Independent claim 4 recites, in pertinent part:

A semiconductor device including means for electron tunneling, comprising:

a first conductive layer; an annealed silicon dioxide tunneling layer having a thickness less than 2000 Angstroms formed on top of said conductive layer, said silicon dioxide layer being formed by low pressure chemical vapor deposition comprising the use of tetraethylorthosilicate;
a second conductive layer formed on top of said silicon dioxide layer ...

Id. at 5:30-43. Claims 12 and 13 were added to the '370 patent in reissue. These claims are identical to claims 1 and 4, respectively, except that claims 12 and 13 delete the language “comprising the use of tetraethylorthosilicate” present in the earlier claims. Id. at 6:16-46. The genesis and subsequent deletion of these TEOS limitations is the focus of this dispute.

II. Prosecution History

The '370 patent, issued at the very end of 2003, has its origins in a patent application filed in the year 1988, and the relevant prosecution history, stretched out over four different related applications, is voluminous. The following summarizes this history and sets forth in detail only those aspects of the prosecution history that are directly relevant to resolving the parties’ summary judgment motions.

A. The Original Application

Xicor’s predecessor-in-interest 1 filed patent application No. 07/195,766 (“the '766 application”) on May 17, 1988. The '766 application contained method claims 1-12 and an apparatus claim 13. Each of the independent claims 1, 6, 7, 9, and 13 included the deposition of silicon dioxide by LPCVD, but none of these claims were limited to the use of TEOS in that LPCVD process. Evans Decl. Exh. E at INT0001015-17. In an office action dated January 19, 1989, the examiner found that the '766 application claimed two distinct inventions and ordered the applicant to restrict the application to either the method or the apparatus claims. Id. at 1043. The examiner reasoned, inter alia, that the apparatus recited in claim 13 “could be made by processes materially different than those in claims 1-12 and accordingly unpatentability of the [apparatus] would not necessarily imply unpatentability of the [processes].” Id. The applicant traversed the restriction requirement but *1076 elected to proceed with the method claims 1-12 should the restriction become final. Id. at 1047-51. The examiner made the restriction requirement final on August 2, 1989. Id. at 1053-54.

B. The '774 Patent Prosecution

On June 26, 1990, the applicant filed a continuation application, No. 07/545,122 (“the '122 application”), which contained solely the method claims 1-12 of the '766 application. On October 9, 1990, Claims 1-3 and 9 were rejected, inter alia, as anticipated by the prior art “Peek” reference. Id. at 1107. The examiner stated that “Peek discloses a method of fabricating an EEPROM in which the dielectric is obtained by LPCVD of TEOS at 730°C.” Id. Xicor responded by amending claim 1 to add the limitation “comprising the use of a silicon and oxygen bearing vapor comprising [TEOS] at a temperature between 450° and 1000°C” to the recited LPCVD process. Id. at 1117. Xicor attached to its response a supporting declaration from William H. Owen, the Vice President of Product Planning and Intellectual Properties at Xicor, which explained why Peek did not anticipate claims 1-3. See id. at 1127-1135. Based on the Owen declaration, Xicor argued:

Peek never actually constructed an EEPROM using TEOS nor did he deposit any oxide layers intended to be used as a tunneling oxide ...

Free access — add to your briefcase to read the full text and ask questions with AI

Related

Greenliant Systems, Inc. v. Xicor LLC
692 F.3d 1261 (Federal Circuit, 2012)

Cite This Page — Counsel Stack

Bluebook (online)
776 F. Supp. 2d 1072, 2011 U.S. Dist. LEXIS 30245, 2011 WL 1045235, Counsel Stack Legal Research, https://law.counselstack.com/opinion/silicon-storage-technology-inc-v-xicor-llc-cand-2011.