MAGSIL CORP. v. Seagate Technology

764 F. Supp. 2d 674, 2011 U.S. Dist. LEXIS 15839, 2011 WL 588642
CourtDistrict Court, D. Delaware
DecidedFebruary 16, 2011
DocketCivil Action 08-940
StatusPublished
Cited by1 cases

This text of 764 F. Supp. 2d 674 (MAGSIL CORP. v. Seagate Technology) is published on Counsel Stack Legal Research, covering District Court, D. Delaware primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
MAGSIL CORP. v. Seagate Technology, 764 F. Supp. 2d 674, 2011 U.S. Dist. LEXIS 15839, 2011 WL 588642 (D. Del. 2011).

Opinion

MEMORANDUM

HARVEY BARTLE III, Chief Judge.

Plaintiffs MagSil Corporation and Massachusetts Institute of Technology (collec *676 tively “plaintiffs”) have sued Hitachi Global Storage Technologies Inc., Hitachi America Ltd., Hitachi Data Systems Corporation, and Shenzhen ExcelStor Technology, Ltd. (collectively “defendants”) for infringement of U.S. Patent No. 5,629,922 (the “'922 patent”), entitled “Electron Tunneling Device Using Ferromagnetic Thin Films.”

Before the court are the parties’ cross motions for summary judgment. Plaintiffs’ motion asserts that defendants’ hard drive products and components infringe the '922 patent and that one reference on which defendants rely is not prior art to the '922 patent. In their motion, defendants argue that plaintiffs cannot prove infringement, and alternatively, that the asserted claims of the '922 patent are invalid as obvious, insufficiently enabled, and lacking a sufficient written description.

I.

Summary judgment is appropriate when “the pleadings, the discovery and disclosure materials on file, and any affidavits show that there is no genuine issue as to any material fact and that the moving party is entitled to judgment as a matter of law.” Fed.R.Civ.P. 56(c); see Liebel-Flarsheim Co. v. Medrad, Inc., 481 F.3d 1371, 1377 (Fed.Cir.2007). In viewing the record, all justifiable inferences are to be drawn in favor of the non-moving party. Anderson v. Liberty Lobby, Inc., 477 U.S. 242, 245, 106 S.Ct. 2505, 91 L.Ed.2d 202 (1986); CFMT, Inc. v. Yieldup Int’l Corp., 349 F.3d 1333, 1337 (Fed.Cir.2003). In determining whether summary judgment is appropriate, we “view the evidence presented through the prism of the substantive evidentiary burden that would inhere at trial.” AK Steel Corp. v. Sollac, 344 F.3d 1234, 1238 (Fed.Cir.2003) (quoting Anderson, 477 U.S. at 245, 106 S.Ct. 2505) (internal quotation omitted).

II.

Plaintiff Massachusetts Institute of Technology is the assignee of the '922 patent, and plaintiff MagSil Corporation has an exclusive license to develop commercially the technology described in that patent. Defendants produce and sell hard disc drives and components of hard disc drives that plaintiffs contend infringe claims 1-5, 23-26 and 28 (the “asserted claims”) of the '922 patent.

The application leading to the '922 patent was filed on March 21, 1995, and the U.S. Patent and Trademark Office (“PTO”) issued the '922 patent to inventors Jagadeesh Moodera, Terrilyn Wong, Lisa Kinder, and Robert Meservey on May 13, 1997. The '922 patent states claims relating to a multi-layered device, called a junction that consists of at least two thin electrodes separated by a thin layer of insulation. Independent claim 1 of the '922 patent teaches:

A device forming a junction having a resistance comprising: a first electrode having a first magnetization direction, a second electrode having a second magnetization direction, and an electrical insulator between the first and second electrodes, wherein applying a small magnitude of electromagnetic energy to the junction reverses at least one of the magnetization directions and causes a change in the resistance by at least 10% at room temperature.

'922 patent at 8:43-54. Dependent claims 2 through 5 each add additional limitations to claim 1, none of which is relevant for present purposes. Independent claim 23 teaches:

A memory device for storing binary data comprising:
a movable read-write sensor head comprising two trilayer devices, each having a junction with a resistance, separated by a gap, wherein each device comprises:
*677 a first film layer having a first magnetization direction,
a second film layer having a second magnetization direction, and
an electrical insulator layer between the first and the second film layers, wherein applying a small magnitude of electromagnetic energy to the junction reverses at least one of the magnetization directions and causes a change in the resistance by at least 10% at room temperature.

Id. at 10:25-37. Dependent claims 24 through 26 and claim 28 each add limitations to claim 23 that, similar to claims 2 through 5, do not bear on the motions before the court.

According to the patent specification, researchers had known “for many years” the basic theory of “tunnel resistance arising from conduction electron spin polarization.” Id. at 2:3-5. In short, this resistance is a “quantum phenomenon” that arises when electric current is passed through electrodes separated by a “thin insulating layer.” Id. at 1:17-23. Each of the electrodes has a magnetization direction, and the electrical resistance the junction exhibits depends on the relative alignments of the electrodes’ magnetization directions. The junction’s electrical resistance is minimized when the electrodes’ magnetization directions are parallel and is maximized when the magnetization directions are antiparallel, 1 that is, offset by 180 degrees. Id. at 1:26-31. Applying magnetic fields to the junction rotates one or more of the electrodes’ magnetization directions, and by controlling these rotations, the junction’s electrical resistance can be increased or decreased. Id. at 2:15-33.

The specification reveals that the work giving rise to the '922 patent has “consistently” yielded a change in resistance of 10% “in several tens of junctions” and that the inventors had observed resistance changes of “as much as 11.8%” at room temperature. Id. at 2:44-51, 5:32-38. The specification further explains that “[t]his increase in [resistance] is believed to depend, inter alia, on a decrease in surface roughness, which apparently directly couples the two electrodes ferromagnetieally.” Id. at 2:51-54. It states that the insulating layer between the junction’s electrodes is an improvement over prior art and is “important in keeping the surface integrity of the [ferromagnetic] electrodes.” Id. at 2:56-58. The specification also describes in some detail the method by which the inventors constructed their preferred embodiments and the means by which the junctions described in the patent may be incorporated into a data storage device. Id. at 3:52-4:38, 6:66-8:36.

III.

We first turn to defendants’ argument that the invention claimed has not been enabled in the patent specification.

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764 F. Supp. 2d 674, 2011 U.S. Dist. LEXIS 15839, 2011 WL 588642, Counsel Stack Legal Research, https://law.counselstack.com/opinion/magsil-corp-v-seagate-technology-ded-2011.