KIPB LLC v. Samsung Electronics Co., Ltd.

CourtDistrict Court, E.D. Texas
DecidedMarch 27, 2020
Docket2:19-cv-00056
StatusUnknown

This text of KIPB LLC v. Samsung Electronics Co., Ltd. (KIPB LLC v. Samsung Electronics Co., Ltd.) is published on Counsel Stack Legal Research, covering District Court, E.D. Texas primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
KIPB LLC v. Samsung Electronics Co., Ltd., (E.D. Tex. 2020).

Opinion

IN THE UNITED STATES DISTRICT COURT FOR THE EASTERN DISTRICT OF TEXAS MARSHALL DIVISION

KIPB LLC, § § Plaintiff, § § v. § § Case No. 2:19-cv-00056-JRG-RSP SAMSUNG ELECTRONICS CO. § LTD.; SAMSUNG ELECTRONICS § AMERICA, INC.; SAMSUNG § SEMICONDUCTOR, INC.; SAMSUNG § AUSTIN SEMICONDUCTOR, LLC; § and QUALCOMM GLOBAL TRANDING § PTE. LTD., § § Defendants. §

CLAIM CONSTRUCTION MEMORANDUM OPINION AND ORDER

On February 26, 2020, the Court held an oral hearing to determine the proper construction of the disputed claim terms in U.S. Patent No. 6,885,055 (the “’055 Patent”). The Court has considered the parties’ claim construction briefing (Dkt. Nos. 61, 63, 65, and 66) and arguments. Based on the intrinsic and extrinsic evidence, the Court construes the disputed terms in this Memorandum and Order.1 See Phillips v. AWH Corp., 415 F.3d 1303 (Fed. Cir. 2005); Teva Pharm. USA, Inc. v. Sandoz, Inc., 135 S. Ct. 831 (2015).

1 All citations to CM/ECF documents refer to the page number provided by the original document rather than the page number provided by the CM/ECF system unless otherwise noted. 1 I. BACKGROUND Plaintiff KIPB LLC (formerly known as Kaist IP US, LLC) (“Kaist”) has asserted the ’055 Patent against Defendants Samsung Electronics Co., Ltd., Samsung Electronics America, Inc., Samsung Semiconductor, Inc., Samsung Austin Semiconductor, LLC, and Qualcomm Global Pte. Ltd. (collectively “Defendants”). In a prior action, claim construction issues between the parties regarding the ’055 Patent were litigated.2 KAIST IP US LLC v. Samsung Elecs. Co., Ltd., et al.,

No. 2:16-cv-01314-JRG-RSP (“First Case”). In the First Case, this Court issued a claim construction order. First Case, Dkt. 179 (Cl. Construction Memorandum Opinion and Order) (“First Case Order”). A final judgment was issued in the First Case on February 21, 2020. First Case, Dkt. No. 678. Appeals in the First Case have not yet been completed. After the issuance of the First Case Order, the United States Patent and Trademark Office (“Patent Office”) has rejected the asserted claims in an ex parte reexamination (“EPR”). The EPR is still ongoing. The technology and legal background of the First Case Order is applicable in the present case, and thus, will not be repeated here. Ten terms are in dispute between the Parties (Terms #1–10). The Court refers to the same term numbers as used by the parties.

II. AGREED TERMS Prior to the oral hearing, the parties agreed to the following terms: Term Agreed Construction

“a certain height” Plain and ordinary meaning (all asserted claims) “a gate oxide layer which is formed on both Plain and ordinary meaning

2 The parties in the present case were also in the First Case except Qualcomm Global Trading Pte. Ltd. was not in the First Case, rather the parent entity Qualcomm Inc. was a party in the First Case. 2 Term Agreed Construction side-walls of the Fin active region” (all asserted claims) “a first oxide layer which is formed on the Plain and ordinary meaning upper surface of said Fin active region” (all asserted claims) “a gate which is formed on said first and Plain and ordinary meaning second oxide layer” (all asserted claims) “a source/drain region which is formed on both Plain and ordinary meaning sides of the Fin active region except where said gate overlaps with the Fin active region” (all asserted claims)

Dkt. No. 66-1 at 12–13. III. DISPUTED TERMS FOR WHICH THE FIRST CASE CONSTRUCTION IS ADOPTED FOR THE REASONS IDENTIFIED IN THE FIRST CASE Ten terms remain in dispute. A number of terms in dispute were previously construed by this Court in the First Case. As to four terms (Terms #1, #5, #6 and #8), Defendants do not agree with the Court’s prior constructions but stand on their prior briefing, contending that Defendants are doing so to preserve those issues for appeal. As the issues before this Court on these four terms are substantially the same as in the First Case, the Court adopts the prior constructions for the same reasons as stated in the First Court Order. These four terms are listed below:

3 Term Court’s Construction #1 “a double-gate FinFET device” The preamble is not limiting (claims 1 and 13) #5 “said doping junction depth for the The term is not indefinite and the term has its source/drain formed in said Fin active region, plain and ordinary meaning when the upper surface of said second oxide layer is taken as a reference level (0 nm), is around 0 nm for 50 nm above the reference level” (claim 11) #6 “said doping junction depth for the The term is not indefinite and the term has its source/drain formed in said Fin active region, plain and ordinary meaning. when the upper surface of said second oxide layer is taken as a reference level (0 nm), is around 0 nm to -50 nm below the reference level” (claim 12) #8 “the oxidation layer” as the term is used in The term is not indefinite and the term “the the phrase “the resistance of said Fin active oxidation layer” means “the second oxide region is reduced by enlarging the width of layer.” said Fin active region within the oxidation layer as it approaches the bulk silicon substrate” (claim 13)

First Case Order at 9–17 and 40–47. IV. REMAINING DISPUTED TERMS Generally, Kaist contends that issue preclusion applies to all of the terms presently disputed. Dkt. No. 61 at 4–12. In the briefing, Defendants contended that as no appeals had been filed or decided yet at that time, the parties are not precluded from litigating claim construction issues. Dkt. No. 63 at 2. Further, as to the remaining terms, Defendants contend that five terms (Terms #2–4, 7 and 9) have been encumbered with significant prosecution history in the EPR after 4 the First Case Order, thus warranting additional consideration by this Court as to the proper construction of those terms. Dkt. No. 63 at 1–2. As to Term #10, Defendants contend that the Court previously did not construe this term. Having reviewed the intrinsic evidence, extrinsic evidence and arguments raised, the Court

finds that it is not necessary to decide the issue preclusion question to reach the Court’s claim construction conclusions provided herein. The remaining terms, Terms #2–4, 7, 9, and 10, are discussed below.

2. “a contact region and a metal layer which are formed at said source/drain and gate contact region” (claims 1 and 13)

Kaist’s Proposed Construction Defendants’ Proposed Construction Plain and ordinary meaning Indefinite

In the First Case, this term was agreed to have a plain and ordinary meaning. Dkt. No. 61 at 14. Defendants contend that in the EPR, the Patent Office found the term to be indefinite because it was unclear as to how the claimed transistor would be operative. Dkt. No. 63 at 16. A. Positions of the Parties Kaist contends that in the First Case this term was agreed to have a plain and ordinary meaning and that Defendants are precluded from re-arguing the term. Dkt. No 61 at 14–15. Specifically, Kaist notes that the Defendants originally disputed this term but then agreed to a plain and ordinary meaning prior to the claim construction hearing. Id. Further, Kaist contends that in the First Case trial, Defendants’ expert was able to understand the term sufficiently to apply the term to prior art presented as part of Defendants’ invalidity defense. Id. at 16. 5 Kaist contends that it is misleading to assert that the term was found indefinite in the EPR as the Examiners did not make a finding that the term was indefinite.

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Bluebook (online)
KIPB LLC v. Samsung Electronics Co., Ltd., Counsel Stack Legal Research, https://law.counselstack.com/opinion/kipb-llc-v-samsung-electronics-co-ltd-txed-2020.