Katana Silicon Technologies LLC v. Micron Technology, Inc.

Court of Appeals for the Federal Circuit·Decided April 21, 2026·No. 24-2100·Unpublished

Opinion

NOTE: This disposition is nonprecedential.

United States Court of Appeals for the Federal Circuit

KATANA SILICON TECHNOLOGIES LLC, Appellant

v.

MICRON TECHNOLOGY, INC.,

Appellee

2024-2100, 2024-2101, 2024-2103

Appeals from the United States Patent and Trademark Office, Patent Trial and Appeal Board in Nos. IPR2023- 00071, IPR2023-00072, IPR2023-00073.

Decided: April 21, 2026

HOWARD LITHAW LIM, Carter Arnett PLLC, Dallas, TX, argued for appellant. Also represented by SCOTT W. BREEDLOVE.

ANDREW DUFRESNE, Perkins Coie LLP, Madison, WI, argued for appellee. Also represented by AMANDA TESSAR, Denver, CO; AMY ELIZABETH SIMPSON, Holland & Knight LLP, Los Angeles, CA.

2 KATANA SILICON TECHNOLOGIES LLC v.

MICRON TECHNOLOGY, INC.

Before TARANTO, CLEVENGER, and STOLL, Circuit Judges. STOLL, Circuit Judge.

Katana Silicon Technologies LLC appeals from three final written decisions of the United States Patent and Trademark Office Patent Trial and Appeal Board in inter partes reviews of U.S. Patent Nos. RE38,806 and 6,352,879. In its final written decisions, the Board held claims 1–33 of the ’806 patent and claims 1–15 of the ’879 patent unpatentable as obvious under 35 U.S.C. § 103. In making that determination, the Board adopted a claim construction Katana challenges on appeal. Because we adopt the Board’s construction, we affirm the Board’s decisions .

BACKGROUND

The ’806 and ’879 patents disclose “a semiconductor device having a structure substantially miniaturized to a chip size, i.e., a CSP (Chip Size Package) structure, and a method of manufacturing such a semiconductor device.” U.S. Patent No. RE38,806 col. 1 ll. 17–20. 1 The patents specifically describe a miniaturized semiconductor device having a CSP that includes multiple semiconductor chips stacked vertically inside the package (i.e., a stacked package structure). Id. at col. 1 ll. 15–20, col. 1 ll. 53–65, col. 2 ll. 63–65. For example, Figure 14(a) of the ’806 patent (reproduced below) shows a cross-sectional view of a

1 The ’806 and ’879 patents have identical specifications except for their respective priority statements and an explanation of markup notations unique to the reissued ’806 patent. Compare ’806 patent col. 1 ll. 4–12, with U.S. Patent No. 6,352,879 col. 1 ll. 4–7. Because the patents share a common specification, we refer only to the ’806 patent specification unless otherwise specified.

KATANA SILICON TECHNOLOGIES LLC v. 3 MICRON TECHNOLOGY, INC.

conventional semiconductor device having a stacked package structure. Id. at col. 6 ll. 24–26.

Id. Fig. 14(a). The specification explains that in a conventional semiconductor device where multiple semiconductor chips are stacked and laminated, two different methods are used to bond the laminated semiconductor chips to each other—“an adhesive agent (paste) potting method and a method using a thermo-compression sheet.” Id. at col. 2 ll. 16–22.

In the potting method, if the amount of the adhesive agent is excessive, the adhesive agent may spread and overflow beyond the outer edge of the semiconductor chips, as illustrated by overflown adhesive agent 87a between semiconductor chips 81 and 82 in Figure 14(a). Id. at col. 2 ll. 23–29. Such overflown adhesive agent may contact wires in the package or the electrode pad of the semiconductor chips, so the wiring must be provided far from the side surfaces of the chips, which increases the package size. Id. at col. 2 ll. 30–43. “On the other hand, if the amount of the adhesive agent is too small, a gap is produced between the semiconductor chips 81 and 82 . . . causing problems such as separation of the semiconductor chip 82 from the semiconductor chip 81.” Id. at col. 2 ll. 44–48.

In the method using a thermo-compression sheet, the thermo-compression sheet is disposed on the surface of a first semiconductor chip, and then a second semiconductor 4 KATANA SILICON TECHNOLOGIES LLC v.

MICRON TECHNOLOGY, INC.

chip is adhered to the thermo-compression sheet. Id. at col. 2 ll. 49–56, col. 4 ll. 12–22, col. 9 ll. 46–50. Thus, the thermo-compression sheet must be the same size as semiconductor chip 82 and must be placed accurately at a specific location on semiconductor chip 81. Id. at col. 2 ll. 49– 53. “In addition, the semiconductor chip 82 must be bonded to the thermo-compression sheet so as to be located exactly on the top of the thermo-compression sheet.” Id. at col. 2 ll. 53–57. This process thus requires accurate positioning twice, “i.e., positioning the thermo-compression sheet, etc., and positioning the first or second semiconductor chip on the thermo-compression sheet.” Id. at col. 3 ll. 33–38.

The ’806 and ’879 patents purport to avoid these complications with the conventional bonding methods by forming an “adhesion layer” “in advance” on a back surface of a wafer that has a circuit formed on its front surface. Id. at col. 4 ll. 17–20, col. 6 ll. 42–45. In other words, the adhesion layer is formed on a wafer during the semiconductor fabrication process before the wafer is cut or diced to produce individual chips with adhesion layers. Id. at col. 4 ll. 17–63. By applying the adhesion layer in advance, “the adhesive agent does not overflow the space between the first and second semiconductor chips,” which allows other components like wiring to be positioned closer to the chip edges and allows the chip to be mounted “by accurately positioning it once.” Id. at col. 4 ll. 57–63, col. 5 ll. 15–29, col. 3 ll. 19–44, col. 3 l. 66–col. 4 l. 24, col. 4 ll. 48–56.

Every independent claim of the ’806 and ’879 patents requires at least one “adhesion layer” on the back surface of a chip for mounting the chip in a stack. For example, claim 1 of the ’806 patent recites:

1. A semiconductor device including a stacked package structure and a chip size package structure , comprising:

KATANA SILICON TECHNOLOGIES LLC v. 5 MICRON TECHNOLOGY, INC.

an insulating substrate including a wiring layer having electrode sections; a first semiconductor chip having a first adhesion layer adhered to its back surface where a circuit is not formed, said first semiconductor chip being mounted on said wiring layer through the first adhesion layer; and a second semiconductor chip having a second adhesion layer adhered to its back surface where a circuit is not formed, said second semiconductor chip being mounted on a circuitformed front surface of said first semiconductor chip through the second adhesion layer; each of said first and second semiconductor chips being wire-bonded to the electrode section with a wire, said first and second semiconductor chips and the wire being sealed with a resin.

Id. at col. 13 ll. 45–63 (emphases added).

Micron Technology, Inc. filed three petitions for inter partes review, arguing that International Patent Application Publication No. WO 96/13066 (“Mostafazadeh”), in combination with other references not pertinent to this appeal , rendered all claims of the ’806 and ’879 patents obvious . Mostafazadeh, like the ’806 and ’879 patents, recognizes the advantages of forming a layer that provides adhesion on a wafer before the wafer is cut or diced to produce individual chips with adhesive layers that neither overflow nor underfill the chip’s surface. See J.A. 1280–83. Most relevant to Katana’s arguments on appeal, Mostafazadeh ’s adhesive layer is formed on the wafer, dried, diced, and later cured during bonding. J.A. 1282, 1284–85, 1297.

The Board held all the challenged claims obvious under § 103 in view of Mostafazadeh, in combination with other 6 KATANA SILICON TECHNOLOGIES LLC v.

MICRON TECHNOLOGY, INC.

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