Jack St. Clair Kilby v. Herbert Nelson

418 F.2d 937, 57 C.C.P.A. 770
CourtCourt of Customs and Patent Appeals
DecidedDecember 4, 1969
DocketPatent Appeal 8206
StatusPublished
Cited by1 cases

This text of 418 F.2d 937 (Jack St. Clair Kilby v. Herbert Nelson) is published on Counsel Stack Legal Research, covering Court of Customs and Patent Appeals primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
Jack St. Clair Kilby v. Herbert Nelson, 418 F.2d 937, 57 C.C.P.A. 770 (ccpa 1969).

Opinion

ALMOND, Judge.

This appeal is from the decision of the Board of Patent Interferences awarding priority of invention of counts 1-4 of Interference No. 92,840 to Nelson, the senior party. The counts correspond to claims 1, 3, 7 and 8, respectively, of Nelson patent No. 2,972,092, issued February 14, 1961 on an application filed August 11, 1959, 1 2 which claims were copied by Kilby in his application serial No. 169,557, filed January 29, 1962.

No testimony was taken by either party and the senior party Nelson is restricted to his August 11, 1959 filing date for conception and reduction to practice. Before the board, Kilby relied for priority on two prior applications of which his involved application is stated to be a continuation-in-part but, before us, he limits his reliance to just one of them, serial No. 811,486 (the ’486 application), filed May 6, 1959. 2

Nelson contended before the board that none of the Kilby applications 3 support the counts and the board agreed with *938 that contention. In determining whether the board was guilty of reversible error, we conclude that the ’486 application does not support the counts and that the board’s decision must be affirmed for that reason.

The invention relates to a semiconductor circuit element, such as a diode or transistor, of the mesa type. The record shows that a mesa type element may be formed by diffusing into a semiconductive wafer of one conductivity type, such as P-type, an active impurity which will convert the surface of the wafer to the opposite conductivity type, such as N-type, and provide a rectifying P-N junction at the interface between the surface zone and the wafer interior. Thereafter a portion of the wafer surface is removed down to and including the junction region to leave the remaining portion of the surface zone of N-type conductivity extending like a plateau or mesa from the remaining portion of the wafer of P-type conductivity. The size and the shape of the P-N junction of the device between the mesa and the wafer corresponds to the size and shape of the mesa and may be controlled with precision.

Counts 1 and 4 are representative:

1. A circuit element comprising a semiconductor wafer having two opposed major faces; at least one mesa of semiconductor material on one of said major wafer faces; an insulating coating on said one major wafer face around each said mesa; and a conductive film over the top of, and in contact with, each said mesa and the surrounding coating.

4. A two-terminal device comprising a semiconductor wafer having two opposed major faces; a surface zone of given conductivity type on said wafer including one of said major faces; an opposite conductivity type mesa on said other of said major faces; a rectifying barrier between said mesa and said surface zone; an insulating coating on said other major face around said mesa; a conductive film over the top of, and in contact with, said mesa and the top of the surrounding coating; and electrical leads to said conductive film and to the oppsoite major face.

For an understanding of the invention as disclosed by Nelson, reference is made to a sectional view shown in Fig. 2 of his patent and reproduced in enlarged scale in his brief as follows:

This figure shows a diode comprising a P-type germanium wafer having an N-type mesa projecting upwardly therefrom with a P-N junction between the mesa and the bulk of the wafer. The element is extremely small as evidenced by the disclosure that the mesa may measure less than 2 mils in diameter. An insulating coating 26 is deposited around the mesa and then a conductive *939 film 27, with a thickness of about 0.1 to 0.5 mil, is evaporated over the top of the mesa and a portion of the insulating coating 26. This film forms a conductive member which has a lateral area considerably greater than the mesa. To complete the diode, a conductive pellet 21, which may also have a greater lateral area than the mesa, is bonded to the conductive film 27, a conductive pellet 22 is bonded to the opposite face of the unit, and lead wires 23 and 29 are attached to electrodes formed by pellets 21 and 22, respectively.

The structure disclosed in the Kilby ’486 application is illustrated in plan and cross-sectional views in Figs. 1 and 3, respectively, thereof:

The figures show, in greatly enlarged scale, a miniaturized electronic module made up of interconnected elements, including a transistor designated generally as 14. The module includes a block of semiconductor material 19 which may be of N-type. The transistor which is formed within and upon the block comprises a portion of the block of N-type conductivity together with a mesa portion made up of layers 21 and 22 of semiconductor material which are of conductivity types respectively opposite to and similar to the type of the main body of the block. The layer 21 constitutes the base region of the transistor and the upper layer 22 the emitter region. A portion of the block 19 itself forms the collector. After the block with the layers 21 and 22 is formed, a coating 20 of in *940 sulating material is provided over the entire block. Thereafter, small apertures are etched in the coating at locations for the emitter, base and collector contacts or electrodes shown at 12, 13 and 11 as by using a mask in conjunction with a photo-resist process. It is disclosed that the electrodes may be formed by evaporating or otherwise depositing “suitable ohmic-contact-making material” (“antimony-doped gold or other suitable material” for the emitter and collector and a “material such as aluminum” for the base) in the apertures and the entire assembly heated to a predetermined temperature “at which the deposited material alloys with the base, emitter, and collector to form severally distinct ohmic contacts therewith.” Next, a film of highly conductive material, “such as copper or gold,” may be applied by vacuum deposition techniques to those areas shown in Fig. 1 with a cross hatch line extending upwardly to the right, including areas 15, 17 and 23 connected to collector, base and emitter electrodes 11, 13 and 12, respectively.

In reaching the conclusion that the Kilby applications do not support the counts, the board held unsupported the term in count 1 reading:

* * * and a conductive film over the top of, and in contact with, each said mesa and the surrounding coating.

The board’s reasoning was as follows:

In our opinion the term “in contact with” is normally used to denote touching physically. In the electrical arts a “contact” is used to provide an electrical connection with a cooperating part or “contact.” However, the electrical connection connotation urged by Kilby is not a normal one. It is true that an electrical connection results from physical contact or touching of a conductive body with another such body, but this does not mean that every electrical connection between two components of an electrical circuit can properly be the basis for stating that the two parts are in contact with each other.

Free access — add to your briefcase to read the full text and ask questions with AI

Related

Stansbury v. Bond
482 F.2d 968 (Customs and Patent Appeals, 1973)

Cite This Page — Counsel Stack

Bluebook (online)
418 F.2d 937, 57 C.C.P.A. 770, Counsel Stack Legal Research, https://law.counselstack.com/opinion/jack-st-clair-kilby-v-herbert-nelson-ccpa-1969.