In re Hirshon

454 F.2d 752, 59 C.C.P.A. 794, 172 U.S.P.Q. (BNA) 436, 1972 CCPA LEXIS 393
CourtCourt of Customs and Patent Appeals
DecidedFebruary 3, 1972
DocketNo. 8547
StatusPublished

This text of 454 F.2d 752 (In re Hirshon) is published on Counsel Stack Legal Research, covering Court of Customs and Patent Appeals primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
In re Hirshon, 454 F.2d 752, 59 C.C.P.A. 794, 172 U.S.P.Q. (BNA) 436, 1972 CCPA LEXIS 393 (ccpa 1972).

Opinion

Baldwin, Judge.

This appeal is from the decision of the Patent Office Board of Appeals which affirmed the rejection of claims 13,15 and 32 of appellants’ ■application1 under 35 USC 103.

The Iwoention

The appealed claims are drawn to an intermediate product in the mass production of micro size semiconductor devices.2 The product is .a unitary wafer of semiconductor material which embodies a plurality [795]*795of semiconductor devices in spaced parallel rows. The claimed product has terminal straps attached so that when the wafer is broken up into individual devices, each will have its set of terminal straps for electrical connection to an external circuit. An illustrative embodiment of the invention is shown in partial top plan view in Figure 2 of the application (modified by adding reference numerals) :

The drawing shows the product as comprising a plurality of' transistors.3 The individual transistors are delineated by dash lines, extending along parallel horizontal grooves 46 in the top surface of the wafer and intersecting vertical dash lines 50.

Each transistor has terminal straps 38 and 40 which are bonded at their lower ends to electrodes for the base and emitter at 28 and 34, respectively. The free ends of straps 38 and 40 extend upwardly over a groove 46 and overlap the body of the adjacent transistor in the row above. Terminal strap 42 is bonded at its upper end to collector electrode 36 and extends downwardly with its free end passing over a groove 46 and overlapping the body of the transistor immediately below.4 A protective oxide coating underlies the straps except at the-[796]*796points of bonding to the electrodes. As appears from the drawing, the free (upper) ends of terminal straps 38 and 40 in one row are parallel to, are spaced apart from, and overlap to some degree the free (lower) ends of terminal straps 42 in the next higher row.

The only independent claim on appeal is claim 32, which reads:

A semiconductor article Raving a plurality of semiconductor devices therein comprising

a flat wafer of a semiconductor material of one conductivity type, a plurality of spaced areas of the opposite conductivity type in a surface of said wafer, said areas of the opposite conductivity type being arranged in a plurality of spaced parallel rows with each row containing a plurality of said areas, each of said areas forming the P-N junction of a semiconductor device with the material of the wafer, a protective oxide film covering said surface of the wafer, a first set of openings through said protective film, each of said openings of said first set exposing at least a portion of a separate one of said areas of opposite conductivity type,
a second set of openings through said protective film, said second set of openings being arranged in a plurality of spaced parallel rows which alternate with the rows of the areas of opposite conductivity type with each of the openings of said second set exposing a portion of the surface of the wafer adjacent a separate one of said areas of opposite conductivity type,
a separate electrode of an electrically conductive metal covering each of the exposed portions of the wafer and the areas of opposite conductivity type,
a first set of flat terminal straps of an electrically conductive metal each secured at one end along a flat surface thereof to a separate one of the electrodes of the areas of ‘the opposite conductivity type with said first set of terminal straps extending from their respective electrodes away from the row of adjacent wafer electrodes, and a second set of flat terminal straps of an electrically conductive metal each secured at one end along a flat surface ■thereof to a separate one of the wafer electrodes with second set of terminal straps extending from their respective electrodes away from the row of adjacent elec'tro'des of the areas of opposite conductivity type, said terminal straps all lying in a plane juxtaposed and parallel to the said surface of the wafer with the longitudinal axe's of the terminal straps secured to the electrodes of the wafer toeing out of alignment with the longitudinal axes of the terminal straps secured to the electrodes ‘of the areas of opposite conductivity type so that the free end portions of 'the terminal straps secured to the wafer electrodes overlap but are spaced from the free end portions of the terminal ¡Straps secured to the non-adjacent electrodes of the are'as of opposite conductivity type.

•Claim 13 adds a requirement that the terminal straps be “in spaced parallel relation” and claim 15 recites the grooves in the top surface of the wafer between the rows of semiconductor devices, those grooves having a protective oxide coating thereon.

[797]*797 The Rejection

The examiner and tbe board considered tlie appealed claims obvious in view of a patent of Da'hl’berg5 and a French patent.6

Dahlberg discloses a mass production process that provides a wafer of semiconductor material which, like appellants’ wafer, has a plural- . ity of transistors formed therein in columns and rows, with terminal straps attached. A partial top plan view of that wafer, showing but one transistor in full, is found in Figure 2 of the patent:

Intersecting grooves 12 in the top surface of the wafer delineate the individual transistors, each of which includes an emitter electrode 18 and base electrode 20.7 Conductive strips 24 and 24' are each bonded at one end to the respective electrodes and extend in opposite directions therefrom in alignment. An insulating layer on the wafer surface underlies the strips, as at 22, 22'. If desired, strips 24, 24' may be extended beyond the main body portion of the transistor and over the grooves “to provide * * * projecting tab[s] of conductive material for use in making terminal connections.”

The French patent discloses various arrangements of electrical connections between semiconductor devices and external circuits, as for example in Figure 5, reproduced below:

[798]

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Bluebook (online)
454 F.2d 752, 59 C.C.P.A. 794, 172 U.S.P.Q. (BNA) 436, 1972 CCPA LEXIS 393, Counsel Stack Legal Research, https://law.counselstack.com/opinion/in-re-hirshon-ccpa-1972.