CFMT, Inc. v. Steag Microtech Inc.

71 F. Supp. 2d 373, 1999 U.S. Dist. LEXIS 17396, 1999 WL 1021088
CourtDistrict Court, D. Delaware
DecidedNovember 8, 1999
DocketCiv.A. 95-442-RRM
StatusPublished
Cited by3 cases

This text of 71 F. Supp. 2d 373 (CFMT, Inc. v. Steag Microtech Inc.) is published on Counsel Stack Legal Research, covering District Court, D. Delaware primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
CFMT, Inc. v. Steag Microtech Inc., 71 F. Supp. 2d 373, 1999 U.S. Dist. LEXIS 17396, 1999 WL 1021088 (D. Del. 1999).

Opinion

OPINION

McKELVIE, District Judge.

This is a patent case. Plaintiff CFMT, Inc. is a corporation organized under the laws of the State of Delaware, with its principal place of business in Wilmington, Delaware. Plaintiff CFM Technologies, Inc. is a Pennsylvania corporation with its principal place of business in West Chester, Pennsylvania. CFMT is the assignee and owner of United States Patent No. 4,911,761 (the ’761 patent), which was issued on March 27, 1990. CFM is the exclusive licensee under the ’761 patent. Defendant Steag Microtech, Inc. is a Delaware corporation with its principal place of business in Austin, Texas.

On July 10, 1995, plaintiffs (collectively “CFMT”) filed a complaint alleging that Steag infringed one or more claims of the ’761 patent. The case proceeded to trial on issues of infringement, invalidity, and enforceability. On December 12, 1997, the jury returned its verdict. Among its findings, the jury determined that operation of Steag’s Marangoni Dryer literally infringes claims 1, 8, 17, and 22 of the ’761 patent. The jury awarded CFMT damages of $3,105,000.

Steag moved for judgment as a matter of law (“JMOL”) on numerous issues, including infringement. On June 18, 1998, this court issued an Opinion denying Ste-ag’s motions on all issues except that of infringement under the doctrine of equivalents. CFMT, Inc. v. Steag Microtech Inc., 14 F.Supp.2d 572 (D.Del.1998). On that date the court also enjoined Steag from making, using, or selling any such devices that infringe the ’761 patent.

Steag appealed the denial of JMOL for no literal infringement. On May 13, 1999, the U.S. Court of Appeals for the Federal Circuit issued a decision affirming the ruling of this court in all respects except one. CFMT, Inc. v. Steag Microtech, Inc. 1999 WL 319505 (Fed.Cir. May 13, 1999). The appeals court questioned whether one claim limitation of the ’761 patent, “replacing said rinsing fluid with said drying vapor,” reads upon Steag’s method which employs a mixture of 2.5% alcohol vapor and 97.5% gaseous nitrogen as an atmosphere. The appeals court vacated this court’s judgment in part, and remanded the case for reconsideration of the issue of literal infringement of the claim in question.

On June 30, 1999, Steag filed a motion for a judgment as a matter of law that Steag’s drying process does not literally infringe the ’761 patent. Steag also moves to set aside the injunction and the damages award. On July 7, 1999, CFMT tiled a motion for an order to reinstate this court’s judgment of June 18, 1998. Both parties have completed briefing on the issues. This is the court’s decision on the motions.

I. FACTUAL BACKGROUND

The court draws the following facts from the testimony and evidence presented at trial.

A. General Description of the Technology

The patent in suit relates to technology for washing silicon wafers during semiconductor processing. Wafer fabrication is a process that usually takes two to three months to complete, requiring that the wafer be repeatedly etched and implanted with circuitry. During wafer fabrication, *375 the wafers can often be exposed to contaminants and airborne particles, which can be detrimental to the wafers’ microscopic circuits. Between each chemical processing step, the wafers must be washed and dried in a way that reduces the chances that any impurities or chemical residue are left on the wafer surfaces.

During this rinsing and drying process, a premium is placed on not only producing a clean and dry wafer, but on doing so in a way that reduces the chances of streaking or water marks. Streaks and water marks can interfere with the semiconductor’s circuits in the same way as other contaminants. Rapid drying methods are preferred, since allowing water to simply evaporate can leave these streaks and marks.

CFMT began producing a “Full Flow” system for rinsing and drying silicon wafers in 1985. The system is an apparatus that pumps fluids into an enclosed vessel where the wafers remain stationary. The system allows fluids (gases or liquids) to flow past the wafers sequentially and continuously. The apparatus then drains the fluids out the bottom as new fluid comes in the top for rinsing or drying. The system is claimed in U.S.Patent No. 4,778,532 (the ’532 patent), which was assigned to CFM Technologies, and which is not at issue in this case. CFMT optimized the performance of the drying process in the Full Flow system by modifying the equipment and optimizing various parameters, such as the speed at which the vessel drained, the temperature of the rinse water, the number of wafer carriers in the chamber, and the vapor pressure. On April 20, 1988, inventors at CFMT applied for a patent on this optimized process.

B. The ’761 Patent

The Patent and Trademark Office (PTO) issued the ’761 patent on March 27, 1990. The specification of the ’761 patent describes the claimed invention, with extensive discussion of the “drying vapor” that is the focus of the present dispute. The specification states that isopropyl alcohol (isopropanol, or IPA) is the preferred chemical for use as a drying fluid. IPA, the specification explains, is economical, relatively safe (nontoxic), and forms a minimum-boiling azeotrope with water (an azeotrope is a mixture of two substances in such a proportion that they do not separate when boiled).

IPA, the patent continues, “has a tendency to break the harsh surface tension between the hydrophilic water and the relatively hydrophobic wafer surface.” The specification explains that use of a vapor with the proper gas phase properties, such as IPA, can have a “tremendous impact” on the performance of the invention.

Once the IPA performs its water displacement function, the invention employs gaseous nitrogen to purge the isopropanol vapor from the vessel. The nitrogen purge removes any IPA residue from the surface of the wafers and displaces the IPA vapor from the vessel.

CFMT has asserted Claims 1, 8, 17, and 22 of the ’761 patent against Steag. Claim 1, from which all the others depend, reads as follows:

1. A method for drying surfaces of objects which are suspended in a rinsing fluid comprising providing a drying vapor, replacing said rinsing fluid with said drying vapor by directly displacing said rinsing fluid from said surfaces with said vapor at such a rate that substantially no liquid droplets are left on the surfaces after replacement of the rinsing fluid with drying vapor.

C. Overview ofSteag’s Dryer

Steag sells products useful for drying silicon wafers in the United States. Steag calls the product a “Marangoni dryer,” as it allegedly exploits a chemical process known as the Marangoni effect.

To summarize the testimony of witnesses at trial, the Steag dryer comprises a rack of silicon wafers that hangs in a rinse bath of ultra-pure water. The device *376 uses a thin blade knife to slowly lift the wafers out of the bath.

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71 F. Supp. 2d 373, 1999 U.S. Dist. LEXIS 17396, 1999 WL 1021088, Counsel Stack Legal Research, https://law.counselstack.com/opinion/cfmt-inc-v-steag-microtech-inc-ded-1999.