Asm America, Inc. v. Genus, Inc.

401 F.3d 1340, 74 U.S.P.Q. 2d (BNA) 1211, 2005 U.S. App. LEXIS 4310, 2005 WL 605780
CourtCourt of Appeals for the Federal Circuit
DecidedMarch 16, 2005
Docket2004-1211
StatusPublished
Cited by6 cases

This text of 401 F.3d 1340 (Asm America, Inc. v. Genus, Inc.) is published on Counsel Stack Legal Research, covering Court of Appeals for the Federal Circuit primary law. Counsel Stack provides free access to over 12 million legal documents including statutes, case law, regulations, and constitutions.

Bluebook
Asm America, Inc. v. Genus, Inc., 401 F.3d 1340, 74 U.S.P.Q. 2d (BNA) 1211, 2005 U.S. App. LEXIS 4310, 2005 WL 605780 (Fed. Cir. 2005).

Opinion

BRYSON, Circuit Judge.

This case involves a process known as sequential Atomic Layer Deposition (“ALD”), which is used to deposit extremely thin layers of different materials on the surface of a substrate, often as part of the process of manufacturing semiconductor devices. The materials, or reactants, -are applied to the substrate by sequentially vaporizing each reactant and passing it over the substrate. 'Each reactant must be removed from the area of the substrate before the substrate is exposed to a new reactant. The removal process can be effected in one of two ways. The first way is to remove the reactant gas by applying a vacuum to the area surrounding the substrate. That process is referred to as “sucking out” the reactant. The second way is to force a continuous stream of inert gas to flow over the substrate and to inject a pulse of the reactant vapor into the flow so that it is carried over the substrate and then is whisked away. That process is referred to as “blowing out” the reactant.

Appellant ASM America, Inc., owns U.S. Patent No. 6,015,590 (“the ’590 patent”), which pertains to sequential ALD. In addition, ASM is the exclusive licensee with the right to enforce U.S. Patent No. 5,916,-365 (“the ’365 patent”), which also relates to sequential ALD. Together with Arthur Sherman, the inventor of the ’365 patent, ASM filed suit in United States District Court for the Northern District of California, No. 01-CV-02190,- alleging that appel-lee Genus, Inc., was infringing those two patents. Genus answered and filed counterclaims asserting antitrust violations and seeking a declaratory judgment of invalidity, noninfringement, and unenforceability. By consent of the parties, the case was referred to a magistrate judge pursuant to 28 U.S.C. § 636(c). Genus’s antitrust and inequitable conduct claims were subse *1342 quently dismissed. After extensive briefing and a hearing, the magistrate judge construed several terms in the ’590 and ’365 patents. Based on the magistrate judge’s claim construction, Genus filed motions for summary judgment of noninfringement with respect to both patents. In light of the magistrate judge’s claim construction, ASM did not oppose Genus’s motion with respect to the ’365 patent. However, ASM argued that there were still issues of material fact regarding infringement of the ’590 patent and opposed summary judgment on that patent. The district court granted summary judgment of noninfringement with respect to both patents. ASM appeals the district court’s claim construction and the ensuing grant of summary judgment. We affirm the district court’s judgment based on substantially the same reasoning given by the district court.

I

ASM asserts that Genus infringed claim 1 of the ’590 patent, which states:

A method for growing a thin film onto a substrate, in which a substrate is placed in a reaction space and said substrate is subjected to alternately repeated surface reactions of a plurality of vapor phase reactants to form a thin film, said method comprising the steps of; feeding said vapor phase reactants into said reaction space in the form of vapor phase pulses repeatedly and alternately, each reactant separately from its own source;
causing said vapor phase reactants to react with the surface of the substrate to form a thin film compound on said substrate;
evacuating said reaction space between two successive vapor phase pulses by connecting the reaction space to a pump so that substantially all of said reactants remaining in said reaction space and adsorbed on inner walls of said reaction space are removed to a level of less than 1% prior to the inflow of a second pulse of said two successive vapor phase pul- ■ ses; and
feeding an inactive gas into said reaction space simultaneously with said evacuating step.

On appeal, ASM contends that the district court incorrectly construed the terms “evacuating” and “reaction space.”

A

The term “reaction space” is expressly defined in the specification. The pertinent portion of the specification provides that

the term “reaction space” includes both the space in which the substrate is located and in which the vapor-phase reactions are allowed to react with the substrate in order to grow thin films, namely, the reaction chamber, as well as the gas inflow/outflow channels communicating immediately with the reaction chamber .... According to the invention, the reaction space is the entire volume to be evacuated between two successive vapor-phase pulses.

’590 patent, col. 4, II. 29-43. Applying that definition, which explicitly provides that the reaction space includes the entire volume to be evacuated between two successive vapor-phase pulses, the district court ruled that the reaction space constitutes the reaction chamber and the gas inflow/outflow channels that communicate immediately with the reaction chamber. ASM contends that the court’s definition is erroneous and that the reaction space need not be restricted to “the entire volume to be evacuated between two successive vapor-phase pulses.”

ASM argues that because the dispute between the parties concerns what portions of the device used to perform the claimed process need to be evacuated, defining the “reaction space” as being the *1343 portions of the device that need to be evacuated is circular. A fair reading of the specification, however, shows that the district court’s definition is not circular at all. The specification makes clear that the “entire volume to be evacuated” includes both the reaction chamber and the inflow and outflow channels that directly communicate with the chamber. As the district court explained, if there was no indication of the extent of the volume designated as the reaction space, it would be unclear how much of those inflow and outflow channels would fall within the confines of the reaction space, and the reaction space might include the entire device. Such a situation is unacceptable, since the purpose of the invention is to keep the various vapor-phase reactants from being simultaneously present in the reaction space. See ’590 patent, col. 3, II. 25-29. That situation does not arise, however, because the patent makes clear that the reaction space includes only the section of the device that is evacuated between successive vapor-phase pulses.

B

While the specification makes clear exactly which portion of the ALD device must be evacuated, the evidence is more ambiguous as to what the term “evacuation” means. The district court construed the term evacuation as follows:

Evacuation is accomplished by using a vacuum pump to suck the reactant gases out of the reaction space. Evacuation does not encompass using an inert gas to push the reactant gases out of the reaction space.

ASM contends that this construction of evacuation does not accord with the plain meaning of the term and that it improperly reads limitations from the specification into the claim.

In the first place, ASM asserts, there is no indication in the claim that evacuation requires the use of a vacuum pump.

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401 F.3d 1340, 74 U.S.P.Q. 2d (BNA) 1211, 2005 U.S. App. LEXIS 4310, 2005 WL 605780, Counsel Stack Legal Research, https://law.counselstack.com/opinion/asm-america-inc-v-genus-inc-cafc-2005.